Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

Gouskov, A.; Camassel, Jean; Gouskov, L.

doi:10.1016/0146-3535(82)90004-1

Cited by 111 publications

(81 citation statements)

References 90 publications

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“…For small quantities of volatile dopants, a significant proportion can interact with the ampoule wall. Moreover, a segregation phenomenon was observed for In-doped GaSe; solid solutions can also be present in dissimilar crystallized phases, depending upon their tendency toward differing compositions 29 . For solid solutions, the segregation process is often a common feature due to the different solidification temperatures for the parent crystals.…”

Section: Crystal Characterizationmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Crystal Characterizationmentioning

confidence: 99%

“…Pure and doped GaSe crystals are obtained by different methods, but the most common method is the vertical Bridgman method 29,30 . We proposed the use of a single-zone furnace while gradually moving the ampoule inside 16 .…”

Section: Crystal Growth and Sample Fabricationmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…GaTe is a direct-gap semiconductor with strong excitonic absorption even at room temperature. [11][12][13][14] The optical properties near the bandgap energy region appear to be slightly anisotropic. 12 Anisotropy of the absorption coefficient has been observed to increase at higher energies, which was attributed to transitions from deep states related to the inplane Ga-Ga bonds.…”

Section: Introductionmentioning

confidence: 99%

Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe

et al. 2002

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The electronic band structure of GaTe has been calculated by numerical atomic orbitals densityfunctional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin zone has been determined experimentally by angle-resolved photoelectron spectroscopy. Along these directions, the calculated valence-band structure is in good concordance with the valence-band dispersion obtained by these measurements. It has been established that GaTe is a direct-gap semiconductor with the band gap located at the Z point, that is, at Brillouin zone border in the direction perpendicular to the layers. The valence-band maximum shows a marked p-like behavior, with a pronounced anion contribution. The conduction band minimum arises from states with a comparable s-p-cation and p-anion orbital contribution. Spinorbit interaction appears to specially alter dispersion and binding energy of states of the topmost valence bands lying at Γ. By spin-orbit, it is favored hybridization of the topmost pz-valence band with deeper and flatter px-py bands and the valence-band minimum at Γ is raised towards the Fermi level since it appears to be determined by the shifted up px-py bands.

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“…Chalcogenides of indium take several forms, [18][19][20][21][22] including tetragonal, rhombohedral, cubic, monoclinic, and orthorhombic phases, as well as the hexagonal structures on which we focus here. Indium selenide (InSe) exists in a layered hexagonal structure in nature with an inplane lattice parameter of 4.05Å and a vertical lattice parameter of 16.93Å, and has been proposed for use in ultrahigh-density electron-beam-based data storage.…”

Section: Introductionmentioning

confidence: 99%

Electrons and phonons in single layers of hexagonal indium chalcogenides fromab initiocalculations

2014

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We use density functional theory to calculate the electronic band structures, cohesive energies, phonon dispersions, and optical absorption spectra of two-dimensional In2X2 crystals, where X is S, Se, or Te. We identify two crystalline phases (α and β) of monolayers of hexagonal In2X2, and show that they are characterized by different sets of Raman-active phonon modes. We find that these materials are indirect-band-gap semiconductors with a sombrero-shaped dispersion of holes near the valence-band edge. The latter feature results in a Lifshitz transition (a change in the Fermi-surface topology of hole-doped In2X2) at hole concentrations nS = 6.86×10 13 cm −2 , nSe = 6.20×10 13 cm −2 , and nTe = 2.86 × 10 13 cm −2 for X=S, Se, and Te, respectively, for α-In2X2 and nS = 8.32 × 10 13 cm −2 , nSe = 6.00 × 10 13 cm −2 , and nTe = 8.14 × 10 13 cm −2 for β-In2X2.

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Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe

Cited by 111 publications

References 90 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe

Electrons and phonons in single layers of hexagonal indium chalcogenides fromab initiocalculations

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