Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

Mare, M. de la; Zhuang, Qiandong; Krier, A.; Patanè, A.; Dhar, S.

doi:10.1063/1.3187534

Cited by 23 publications

(18 citation statements)

References 26 publications

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“…[16][17][18] This phenomenon may be related in part to the shift of native donor states into the conduction band as x increases and is supported by our photoluminescence studies revealing optical transitions with energies higher than the band gap of InAs 1−x N x . 26 These states may arise from crystal defects caused by the nitrogen plasma and the low-growth temperature. 24,25 In the next section, we use cyclotron resonance experiments to investigate further the effect of the nitrogen and of composition disorder on the electronic properties.…”

Section: Transverse Magnetoresistancementioning

confidence: 99%

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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We report cyclotron resonance ͑CR͒, transverse magnetoresistance ͑MR͒, and Hall effect studies of a series of n-type InAs 1−x N x epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov-de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs 1−x N x . In GaAs 1−x N x electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x ͑ϳ0.1%͒. These phenomena are significantly weaker in InAs 1−x N x due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs 1−x N x the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths ͑l ϳ 100 nm at 2 K͒ and electron mobilities ͑ =6 ϫ 10 3 cm 2 V −1 s −1 at 300 K͒ that remain relatively large even at x =1%.

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Section: Transverse Magnetoresistancementioning

confidence: 99%

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

et al. 2009

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“…Concrete progress requires accurate and simple modelling that can predict optical properties and become a tool for numerical characterization and device design from the ultra-violet to the THz range and Mid Infrared Ranges (Jepsen et al 2013;Gu et al 2014;Krier et al 2012;De la Mare et al 2009;Zhuang et al 2008). Furthermore, understanding the properties of new bulk semiconductors has attracted renewed interest in the solar cell material arena to avoid environmentally unfriendly materials such as Cd (Vidal et al 2010).…”

Section: Introductionmentioning

confidence: 99%

Automated numerical characterization of dilute semiconductors per comparison with luminescence

Oriaku

Zubelli

et al. 2017

Opt Quant Electron

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This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with trust region-reflective methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra. It further extends recent applications of the theory to the case of dilute nitride semiconductors and confirms results for the s-shape of the luminescence peak as a function of temperature.

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“…Details of the samples used for these experiments are described elsewhere. 7 It should be emphasized that in Raman scattering measurements on highly-absorbing InAsN the weak Raman signal of the N-related LVMs cannot be discriminated from the second-order modes arising from the InAs matrix. In the case of FIR measurements on InAsN/InAs epilayers, the extremely weak absorption arising from the second-order optical modes of InAs may yield relatively deep transmission dips owing to the large volume of the InAs substrate in relation to the InAsN epilayer.…”

Section: Vibrational Spectroscopiesmentioning

confidence: 99%

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez

Oliva

Mare

et al. 2010

Journal of Applied Physics

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

Cited by 23 publications

References 26 publications

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

Effect of low nitrogen concentrations on the electronic properties ofInAs1−xNx

Automated numerical characterization of dilute semiconductors per comparison with luminescence

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

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