Growth and characterization of indium antimonide and gallium antimonide crystals

Udayashankar, N.K.; Bhat, H. L.

doi:10.1007/bf02706714

Cited by 42 publications

(17 citation statements)

References 42 publications

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“…In the Bridgman technique, the conical shape of the ampoule is an important parameter, since conical tip in the ampoule is the point of initiation of the solidification and controls further growth. 15 Researchers reported that the ampoules with cone angles in the range [15][16][17][18][19][20][21][22][23][24] are found to be the most optimum to obtain inclusion-free good quality transparent crystals. [16][17][18] Here we selected the cone angle of [19][20][21][22][23] for the double wall ampoule for the growth of benzil single crystals.…”

Section: Methodsmentioning

confidence: 99%

Growth and characterization of benzil single crystals using nanotranslation by the modified vertical Bridgman technique

Suthan¹,

Dhanaraj²,

Rajesh³

et al. 2011

CrystEngComm

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Benzil single crystals have been grown by the modified vertical Bridgman technique using the double wall ampoule with nanotranslation for the first time. The characterization studies of benzil crystals grown by both single and double wall ampoules were analyzed. The grown benzil crystal was confirmed by single crystal and powder X-ray diffraction analyses. Fourier transform infrared analysis confirms the functional groups of the grown benzil. High resolution X-ray diffraction analysis indicates the crystalline perfection of the grown crystals. The UV-Vis-NIR studies show that the grown benzil crystals cutoff wavelength is around 434 nm. The green emission of the grown benzil was identified by photoluminescence studies. The thermal property of the grown benzil was studied by thermogravimetric and differential thermal analyses. The dielectric measurements of benzil crystals were carried out with different frequencies and temperatures and the results indicate an increase in dielectric and conductivity parameters with the increase of temperature at all frequencies. The second harmonic conversion efficiency of the grown benzil was determined.

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Section: Methodsmentioning

confidence: 99%

Growth and characterization of benzil single crystals using nanotranslation by the modified vertical Bridgman technique

Suthan¹,

Dhanaraj²,

Rajesh³

et al. 2011

CrystEngComm

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“…The bulk crystal growth of GaSb, GaSb:Se and GaSb:Zn was carried out using a Bridgman method [10]. The PA spectra were taken using FTIR spectrometer Nicolet NEXUS 670.…”

Section: Methodsmentioning

confidence: 99%

“…These have stimulated a lot of interest in GaSb for basic research as well as device fabrication. GaSb is the basic material for a variety of lattice parameter matched III-V compounds having band gaps ranging from 0.3 to 1.58 eV (corresponding to wavelengths of 0.8 to 4.3 µm) [10][11].…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of semiconductor materials by using FTIR-PAS

Arévalo¹,

Saavedra²,

Paulraj³

2008

J. Phys.: Conf. Ser.

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Abstract. In this paper we discuss the procedures for photoacoustic measurements for semiconducting materials, including bulk samples like Gallium Antimonide (GaSb). The optical absorption at photon energies near the band gap was measured at room temperature using Fourier Transform Infrared Photoacoustic spectroscopy (FTIR-PAS). Measurements were performed using a NEXUS 670 FTIR-spectrometer (from Thermo Nicolet) with a MTEC model 300 PA cell (MTEC Photoacoustics, Inc.). Optical properties of the studied samples were determined from their room temperature PA spectra and band gaps were calculated directly from absorption spectra IntroductionFourier transform infrared (FTIR) spectroscopy is a characterization technique widely used in physics, chemistry, and biology. FTIR spectroscopy is also employed as one of the methods for evaluating semiconductors materials. FTIR Photoacoustic spectroscopy (FTIR-PAS) is based on the principle of detecting the sample's IR spectrum by "listening" to the sound generated when the sample absorbs infrared radiation. PAS methods have been used extensively for nondestructive characterization of semiconductors and other materials [1][2][3][4]. In FTIR PAS, the IR radiation from a Michelson interferometer is incident on the sample kept in a closed chamber (PA cell), a periodic heat flow is generated inside the sample due to the absorption of this excitation energy. The absorption spectrum of a substance is obtained by detecting and deconvoluting the periodic thermal changes occurring in the sample in the form of the photoacoustic signal generated due to micropressure changes in the surrounding gas in the cell . A highly sensitive microphone is used as a detector and the acoustic signal is thus modulated by the interferogram of the irradiating source summed with the absorption spectrum of the sample, later by Fourier transformation of this signal, the absorption spectrum can be obtained [5]. One of the major advantages of FTIR-PAS is its relative immunity to scattered light. Consequently, this methodology can provide absorption spectra of highly light-scattering materials such as powders (e.g. silica, alumina) or highly-absorbing materials (opaque). The opacity problem has been remedied by reducing the optical density of samples to a suitable level. However, this approach leaves much to be desired due to the time and labor involved, the risk of the sample alteration and preparation error, and the destructive nature of the process. FTIR-PAS is a nondestructive measuring method for semiconductor material, and it does not require sample pretreatment. The non radiative transitions processes which are associated with the band structure, the defect related energy loss mechanism, etc. can be obtained directly from the analysis of PAS spectra. The measurement of the absorption spectrum leads to the energy band gap determination for different kind of semiconductors. When the energy of the incident photon is equal to the band gap energy (E g ), it could be absorbed creating an electron-hole pair; ...

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“…GaSb based binary and ternary alloys have turned out to be important candidates for applications in long wavelength lasers and photodetectors for fiber optic communications [7]. InSb has been interested in high speed applications for transistors and other devices [8,9], which is associated directly with the very low electron effective mass and high mobility [10].…”

Section: Introductionmentioning

confidence: 99%