Growth and characterization of InGaN for photovoltaic devices

Boney, C.; Hernández, Iván Coto; Pillai, R.; Starikov, D.; Bensaoula, A.; Henini, M.; Syperek, M.; Misiewicz, J.; Kudrawiec, R.

doi:10.1002/pssc.201000993

Cited by 15 publications

(9 citation statements)

References 7 publications

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“…One of the main reasons that InN and GaN are of such interest is because of the ability to modify their electronic properties by alloying them. Herein, Mott-Schottky analysis was used to study the electronic properties of InN, GaN and the composite thin films, a technique which has been previously used in the literature 62–65 . The electrical double layer capacitance was measured over a range of applied voltages and the slope of the resulting plot allows one to estimate the carrier concentration of the semiconductor photoelectrodes.…”

Section: Resultsmentioning

confidence: 99%

Low-cost Fabrication of Tunable Band Gap Composite Indium and Gallium Nitrides

McInnes

Sagu

Mehta

et al. 2019

Sci Rep

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III-nitride materials have been linked with a vast number of exciting applications from power electronics to solar cells. Herein, polycrystalline InN, GaN and systematically controlled InxGa1−xN composite thin films are fabricated on FTO glass by a facile, low-cost and scalable aerosol assisted chemical vapor deposition technique. Variation of the indium content in the composite films leads to a dramatic shift in the optical absorbance properties, which correlates with the band edges shifting between those of GaN to InN. Moreover, the photoelectrochemical properties are shown to vary with indium content, with the 50% indium composite having an external quantum efficiency of around 8%. Whilst the overall photocurrent is found to be low, the photocurrent stability is shown to be excellent, with little degradation seen over 1 hour. These findings demonstrate a new and low-cost method for fabricating polycrystalline III-nitrides, which have a range of interesting properties that are highly sought after for many applications.

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Section: Resultsmentioning

confidence: 99%

Low-cost Fabrication of Tunable Band Gap Composite Indium and Gallium Nitrides

McInnes

Sagu

Mehta

et al. 2019

Sci Rep

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“…The holes injected to the GaN nanowire LEDs are mostly resided close to the p-GaN region because of large effective mass and low mobility. This nonuniform carrier distribution mainly in the device active region leads to enhance Auger recombination and increase electron overflow [101]. Nguyen et al showed the improvement on hole transport and injection process using the p-doping in the device active region [36].…”

Section: P-type Modulation Doping For the Enhanced Hole Transportmentioning

confidence: 99%

“…The enhanced hole transport also leads to electron overflow reduction, and less Auger recombination [36]. ainly in the device active region leads to enhance Auger recombination and tron overflow [101]. Nguyen et al showed the improvement on hole transport and cess using the p-doping in the device active region [36].…”

Section: P-type Modulation Doping For the Enhanced Hole Transportmentioning

confidence: 99%

Full-Color III-Nitride Nanowire Light-Emitting Diodes

Velpula¹,

Jain²,

Bui³

et al. 2019

J. ADV. ENG. COMPUT.

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III-nitride nanowire-based light-emitting diodes (LEDs) have been intensively studied as promising candidates for future lighting technologies. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-conned Stark effect due to the effective lateral stress relaxation, promising high-efficiency full-color LEDs. Beside these advantages, however, several issues have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in the active region, non-uniform carrier distribution, electron overflow, and the nonradiative recombination along the nanowire lateral surfaces. Moreover, the presence of large surface states and defects contribute significantly to the carrier loss in nanowire LEDs. Consequently, reported nanowire LEDs show relatively low output power. Recently, III-nitride core-shell nanowire LED structures have been reported as the most efficient nanowire white LEDs with a record-high output power which is more than 500 times stronger than that of nanowire white LEDs without using core-shell structure. In this context, we will review the current status, challenges, and approaches for the high-performance IIInitride nanowire LEDs. More specifically, we will describe the current methods for the fabrication of nanowire structures including top-down and bottom-up approaches, followed by characteristics of III-nitride nanowire LEDs. We will then discuss the carrier dynamics and loss mechanism in nanowire LEDs. The typical designs for the enhanced performance of III-nitride nanowire LEDs will be presented next. The color-tunable nanowire LEDs with emission wavelengths in the visible spectrum and phosphor-free nanowire white LEDs will be finally discussed.This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium provided the original work is properly cited.

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“…Research into using In x Ga 1Àx N as an absorber in solar cells is still in its early stages, although a diverse collection of PV device structures has been fabricated and tested including In x Ga 1Àx N p-i-n and p-n homojunction cells, [37,38] In x Ga 1Àx N/Si hetereojunction, [39] In x Ga 1Àx N/GaN heterostructure solar cells with p-n, p-i-n, and nanorod/nanowire configurations, [40][41][42][43][44][45][46]48] In x Ga 1Àx N p-n junctions, [47,49] In x Ga 1Àx N quantum well solar cells, [50][51][52][53][54] and In x Ga 1Àx N quantum dot PV. [55] A comprehensive survey of the current performance of In x Ga 1Àx N-based PV has been compiled by Bhuiyan et al [56] However, In x Ga 1Àx N films with low indium contents have been used commercially for light-emitting diodes (LEDs) in the green, blue, and violet wavelengths and are more technically advanced [57,58] as are In x Ga 1Àx N-based lasers.…”

Section: B Flexibility In Photovoltaic Device Structurementioning

confidence: 99%