Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Xie, Zili; Zhang, Rong; Xiu, Xiangqian; Liu, Bin; Li, Liang; Ping, Han; Gu, Shulin; Yi, Shaohua; Zheng, Youdou

doi:10.1088/0256-307x/24/4/043

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…Indium nitride (InN) semiconductor has narrow and direct energy band gap value ranging from 0.7 to 1.0 eV [1,2]. It has attracted significant scientific and industrial interests due to its potential application for optoelectronic devices and high-efficiency solar cell [3,4].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Osman

2019

SSP

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In this report, indium nitride (InN) thin films were deposited on kapton polyimide flexible substrate by reactive radio frequency (RF) sputtering method using an indium target in a mixture of Ar and N2gases. The effects of the Ar:N2gas ratio on the properties of the deposited InN thin films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and energy dispersive (EDX) spectroscopy. The XRD revealed that the deposited films composed of polycrystalline wurtzite InN. The FESEM and AFM surface morphologies showed smooth and uniform surface of gas ratio at 60:40 compare to others gas ratio. Overall, the characteristics of the InN thin films were effectively improved with combination the N2:Ar gas ration at 60:40. The results showed that the gas ratio plays an important role in improving the properties of the InN thin films.

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Section: Introductionmentioning

confidence: 99%

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Osman

2019

SSP

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“…Indium nitride (InN) has received substantial research and industrial interests mainly due to their outstanding properties include narrow energy band gap of 0.7 -1.0 eV, high electron mobility and small effective mass. These characteristics best meet the requirement for the development of high-speed and high-performance optical and electronic semiconductor devices [1][2][3]. Despite, there remain fundamental challenges in obtaining high crystallinity InN thin films, such as low dissociation temperature and high volatility of atomic nitrogen [4,5].…”

Section: Introductionmentioning

confidence: 99%

Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

Lee

Yam

et al. 2019

SSP

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The study highlights the effects of growth temperatures ranging from 500 to 650 °C on the properties of indium nitride (InN) thin films prepared by sol-gel spin coating method followed by nitridation, also, the growth mechanism was studied in depth. The findings revealed that the InN crystal growth was promoted at the growth temperature of 600 °C, by which the crystalline quality of the deposited thin films was improved and the densely packed InN grains were formed. However, thermal decomposition of InN was observed at increasing temperature to 650 °C. Apart from that, the infrared (IR) reflectance measurement shows the presence of transverse and longitudinal-optical phonon modes of wurtzite structure InN. These vibrational modes were found to be slightly shifted from the theoretical values as a result of the incorporation of oxygen contamination in the deposited thin films.

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“…Various sophisticated growing methods such as molecular beam epitaxy and metal-organic chemical vapor deposition have been adopted to produce high quality InN thin films [2,5]. It is surprisingly that the films as grown by these advanced growing methods exhibit the low band gap energy at about 0.7 eV [6,7]. However, the mentioned deposition methods are expensive and high maintenance cost.…”

Section: Introductionmentioning

confidence: 99%

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

Lee

Osman

Fong

et al. 2016

MSF

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The study signifies the radio-frequency (RF) sputtering growth and characterizations of indium nitride (InN) thin films deposited on flexible substrates. A three-inch diameter indium (In) sputtering target with purity of 99.999% was used. The deposition was carried out at room temperature and with substrate temperature of 200 °C. The surface morphologies, structural and optical properties of the deposited thin films were examined by using field-emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction as well as Fourier transform infrared spectroscopy. All the results revealed that InN thin films have been successfully deposited on the flexible substrates in the gas mixture ambient of argon and nitrogen.

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Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Cited by 7 publications

References 18 publications

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

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