Growth and characterization of InxBi2−xTe3 single crystals

Transport properties of indium-alloyed and indium telluride nanostructured bismuth telluride

“…This is consistent with the literature where others have found that the band gap decreases with increasing indium content. 30…”

“…This is consistent with the literature where others have found that the band gap decreases with increasing indium content. 30 The alteration of the band structure could be due to the introduction of defect states into the band gap. This can both reduce the band gap of the material and produce a new conducting band with low effective mass but with much poorer thermoelectric performance as found for the half Heusler TE material ZrNiSn, which when it has excess Ni has an impurity band in the gap.…”

Influence of vacuum degree on growth of Bi 2 Te 3 single crystal

“…Narrow gap semiconductor Bi 2 Te 3 alloys with Sb 2 Te 3 and Bi 2 Se 3 , as classic room temperature thermoelectric materials [1][2][3][4] have been widely studied for many years. They have excellent thermoelectric performance which is attributed to their special near-gap electronic structure combined with low lattice thermal conductivity.…”