“…68 The crystal compositions determined by ICP OES as Li 1.04 In 1.10 Se 2 , Li 0.99 In 1.02 Se 2 , and Li 1 In 1.06 Se 2 well correlate with color varying from deep red to ruby-colored and to yellow and with the E g values being 2.01, 2.15, and 2.83 eV, respectively. 67 The convergence of the direct and indirect results identifying non-stoichiometry of LiMX 2 crystals increases their reliability and gives additional insight into the understanding of non-stoichiometry.…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
confidence: 98%
“…In search of effective indicators of defects, many works were performed. 3,63–68 In LISe crystals grown by the B technique, antisite defects of In Li and Li In were identified experimentally via color, actual composition and band gap in combination with theoretical calculation. 63 Herein, even with seemingly optimal technology, red as-grown crystals were defective and converted to yellow on annealing in the presence of LISe polycrystalline material.…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
confidence: 99%
“…3 In contrast, for minimizing defects in LGSe crystals grown by the modified B technique, annealing in Li metal vapor was used that implies any Li deficiency. 67…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
Advances and limitations in the field of growing large, a high optical quality single crystals of AgGaS2 (AGS), AgGaGeS4 (AGGS), ZnGeP2 (ZGP), LiInS2 (LIS), LiGaS2 (LGS), LiInSe2 (LISe), LiGaSe2 (LGSe)...
“…68 The crystal compositions determined by ICP OES as Li 1.04 In 1.10 Se 2 , Li 0.99 In 1.02 Se 2 , and Li 1 In 1.06 Se 2 well correlate with color varying from deep red to ruby-colored and to yellow and with the E g values being 2.01, 2.15, and 2.83 eV, respectively. 67 The convergence of the direct and indirect results identifying non-stoichiometry of LiMX 2 crystals increases their reliability and gives additional insight into the understanding of non-stoichiometry.…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
confidence: 98%
“…In search of effective indicators of defects, many works were performed. 3,63–68 In LISe crystals grown by the B technique, antisite defects of In Li and Li In were identified experimentally via color, actual composition and band gap in combination with theoretical calculation. 63 Herein, even with seemingly optimal technology, red as-grown crystals were defective and converted to yellow on annealing in the presence of LISe polycrystalline material.…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
confidence: 99%
“…3 In contrast, for minimizing defects in LGSe crystals grown by the modified B technique, annealing in Li metal vapor was used that implies any Li deficiency. 67…”
Section: Non-stoichiometry and Defects In Liins2 Liinse2 Ligas2 Lgase...mentioning
Advances and limitations in the field of growing large, a high optical quality single crystals of AgGaS2 (AGS), AgGaGeS4 (AGGS), ZnGeP2 (ZGP), LiInS2 (LIS), LiGaS2 (LGS), LiInSe2 (LISe), LiGaSe2 (LGSe)...
“…2d). against competing phases remains to be demonstrated experimentally, the successful synthesis of large single crystals of LiInSe 2 [26,27] and thin films of Cu 0.5 Li 0.5 InSe 2 [28] suggests that the thermodynamic stability of Tl 0.5 Li 0.5 InSe 2 is plausible. Our calculated formation energy per atom of TlInSe 2 and Tl 0.5 Li 0.5 InSe 2 are -0.398 eV and -0.475 eV, respectively.…”
Section: Electronic Band Structure Of Tlinse 2 Under Hydrostatic Pressurementioning
confidence: 99%
“…The latter compound is known to be a wide-band gap semiconductor with a gap energy E gap = 2.85 eV [23] as opposed to TlInSe 2 where E gap =1.1-1.4 eV [24][25]. Although the phase stability of the hypothetical compound Tl 0.5 Li 0.5 InSe 2 is yet to be demonstrated the successful synthesis of large single crystals of LiInSe 2 [26,27] and thin films of Cu 0.5 Li 0.5 InSe 2 [28] suggests that thermodynamic stability of Tl 0.5 Li 0.5 InSe 2 is plausible. Our DFT calculations allow us to evaluate the electronic density of states and transport properties for 50% Li-substitution where a rigid-band model is inappropriate.…”
We report calculations of the electronic structure of thermoelectric ternary chalcogenide TlInSe 2 in the pressure range 0-30 GPa and the Li-substituted compound Tl 0.5 Li 0.5 InSe 2 using density functional theory. Moreover, with Boltzmann transport theory the electronic transport properties of these compounds are investigated at the optimal p-doping level for a maximized power factor. We follow two possible band engineering routes by applying pressure and elemental substitution with Li to investigate a possible enhancement of the electronic properties for thermoelectric applications.Our study employs several exchange-correlation functionals including the spin-orbit interaction as well as the B3LYP hybrid functional. The band gap in TlInSe 2 obtained by using the Tran-Blaha modified Becke-Johnson functional is in good agreement with experimental data. We find a direct band gap for TlInSe 2 at the M-point and a slightly larger energy gap at the Z-point. The spin-orbit (SO) splitting is extracted from the calculated electronic band structure. When applying pressure to TlInSe 2 the Seebeck coefficient strongly decreases and band crossing results in metallic properties above 20 GPa. In contrast to TlInSe 2 , an indirect band gap is found for Tl 0.5 Li 0.5 InSe 2 with the valence band maximum located at an off-symmetry point along the M-X direction and the conduction band minimum located at an off-symmetry point along the X-P direction. In contrast to TlInSe 2 at ambient pressure, taking the SO coupling into account for Tl 0.5 Li 0.5 InSe 2 and TlInSe 2 at 20 GPa is necessary as it markedly changes the transport properties. Optimally doped p-type TlInSe 2 at ambient pressure has the most favorable electronic band structure for thermoelectric applications superior to both, optimally doped p-type TlInSe 2 under pressure and optimally doped p-type Tl 0.5 Li 0.5 InSe 2 .
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