Growth and Characterization of Na_0.5Bi_0.5TiO₃Thin Films with BaTiO₃Buffer Layer (Study of Au/Na_0.5Bi_0.5TiO₃/BaTiO₃/Pt Capacitor)

Abstract

Lead free bilayer capacitor structure has been fabricated as a combination of sodium bismuth titanate (Na 0.5 Bi 0.5 )TiO 3 (NBT) thin films with barium titanate, (BaTiO 3 ) (BT) buffer layer in situ using pulsed laser deposition (PLD). PLD control parameters have been optimized using Taguchi approach to obtain good quality NBT and BT thin films. It has been observed that dielectric properties of NBT thin films enhanced by inserting BT buffer layer. This improvement in the dielectric properties of NBT thin films have been discussed in relation to the effect of the buffer layer on the structure, microstructure and interface of the NBT/BT multilayer capacitor.

High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

“…The 600 1C (the lowest growth temperature in this work) films show the highest ON/OFF ratio with the best device uniformity. The minimum growth temperature of 600 1C that we tried in our work is within the optimum growth temperature (600-650 1C) reported in many works for PLD growth of NBT films 48,61,62 (although one study reported a substrate temperature of 550 1C, where they used a lower oxygen pressure during deposition 36 ).…”