Growth and characterization of nano-structured Sn doped ZnO

Acharya, Aman Deep; Moghe, S. R.; Panda, Richa; Shrivastava, Sharad; Gangrade, Mohan; Shripathi, T.; Phase, D.M.; Ganesan, V.

doi:10.1016/j.molstruc.2012.04.044

Cited by 59 publications

(25 citation statements)

References 29 publications

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“…%, large particles were formed on the small particles forming a matrix. The formation of large particles may be due to the segregation of the tin in grain boundaries caused by relatively high tin concentration . The large particles were more dense and agglomerate with increasing tin concentrations of 3–5 at.…”

Section: Resultsmentioning

confidence: 99%

“…It has been reported that tin doping results in a strong donor effect as tin can easily substitute for zinc atoms in the ZnO lattice because of the relatively small difference in radius between Sn 4+ (0.069 nm) and Zn 2+ (0.074 nm), which does not produce a large lattice distortion . Therefore, tin is an excellent n‐type dopant for ZnO and can also function as an impurity that changes the optical band gap of ZnO . In addition, it is well‐known that tin‐doped ZnO (TZO) possesses good optical transmittance and electrical properties, which are useful characteristics for a transparent conductive oxide material …”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating

Kim

Leem

2015

Bulletin Korean Chem Soc

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Tin-doped ZnO (TZO) thin films with various tin concentrations (0, 1, 2, 3, 4, and 5 atomic percent [at. %]) are prepared by the sol-gel dip-coating method. The doping effects of tin on the structural and optical properties of the TZO thin films are investigated. All the samples have a granular structure consisting of small particles and exhibited a preferred c-axis orientation. The transmittance and optical band gap of the TZO thin films increase at relatively low tin concentrations of 1-2 at. %, whereas they decrease at higher concentrations of 3-5 at. %. The ratio of near-band-edge emission intensity to deep-level emission intensity significantly increases with increasing tin concentrations from 0 to 4 at. %. In addition, low-temperature photoluminescence for undoped and 4 at. % TZO thin films are measured at 12 K to thoroughly analyze the effects of tin doping.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating

Kim

Leem

2015

Bulletin Korean Chem Soc

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“…3,4 Among inorganic nanoparticles, ZnO nanoparticles are of much interest because of their high surface energy and their electrical, catalytic, electronic, and optical properties. [5][6][7][8] Polyaniline (PANi) is a widely studied conducting polymer because of its high environmental stability, tunable conductivity, and ease of preparation. [9][10][11][12] PANi-ZnO nano-composite materials have been used in gas sensors and other heterostructure devices.…”

Section: Introductionmentioning

confidence: 99%

Growth, Morphology, and Electrical Characterization of Polyaniline–ZnO Nano-composite Langmuir–Blodgett Thin Films

Bhullar

Kaur

Raina

2015

Journal of Elec Materi

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Polyaniline (PANi)-zinc oxide (ZnO) nano-composites were prepared by chemical polymerization of aniline doped with ZnO nanoparticles. Surface pressure-area (p-A) isotherms for the PANi-ZnO nano-composite revealed phase transformations of the monolayer during compression. LangmuirBlodgett (LB) films of PANi and PANi-ZnO nano-composite were characterized by use of UV-visible (UV-Vis) and Fourier-transform infrared spectroscopy, atomic force microscopy, and conductive atomic force microscopy (C-AFM). Local current-voltage (I-V) characteristics revealed the current range for PANi-ZnO nano-composite LB films was larger than that for PANi LB films. Conductive data images were recorded to investigate charge-transport current inhomogeneities in the LB films.

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“…AZO has merits in comparison to ITO such as a similar electro-optical properties, nontoxicity and low cost. [10][11][12] Recently, Gong et al 2 reported infrared reflectance of the AZO thin film deposited by the LPD method on a glass substrate. They reported that AZO thin film deposited on a glass substrate reflected infrared rays around 50%.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of transparent conductive aluminum zinc oxide nanostructured thin film on polycarbonate substrate for heat mirror applications

2015

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In this work an aluminum zinc oxide nanostructure thin film was deposited on polycarbonate polymer substrates using a magnetron sputtering technique. X-ray diffraction, field emission scanning electron microscopy and X-ray photoelectron spectroscopy methods were used to investigate the structure, morphology and surface composition of the thin film. The transmittance and reflectance of the aluminum zinc oxide thin film was investigated by a UV-VIS-NIR spectrophotometer. The sheet resistance of the aluminum zinc oxide thin film was measured by the four point probe method. The average reflectance in the near infrared region and the sheet resistance of the aluminum zinc oxide thin film were 30% and 105 Ω/sq, which encourages the heat mirror of the aluminum zinc oxide thin film.

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Growth and characterization of nano-structured Sn doped ZnO

Cited by 59 publications

References 29 publications

Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating

Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating

Growth, Morphology, and Electrical Characterization of Polyaniline–ZnO Nano-composite Langmuir–Blodgett Thin Films

Fabrication of transparent conductive aluminum zinc oxide nanostructured thin film on polycarbonate substrate for heat mirror applications

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