Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Pürlü, Kağan Murat; Koçak, Merve Nur; Yolcu, Gamze; Perkitel, İzel; Altuntaş, İsmail; Demir, İlkay

doi:10.1016/j.mssp.2022.106464

Cited by 9 publications

(8 citation statements)

References 46 publications

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“…As shown in figures 1(a) and (c), the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane FWHM values of SP-AlN films along [0001] ([1-100]) direction decrease monotonously from 8784 (8856) arcsec to 7596 (7632) arcsec as the N 2 flux increasing from 80 to 160 sccm, and decrease monotonously from 9000 (9108) arcsec to 7236 (7308) arcsec as the sputtering powers increasing from 2000 to 2800 W. Higher N 2 flux and higher sputtering powers could effectively improve the crystal quality of the SP-AlN films. The reasons will be discussed in detail later.…”

Section: Crystal Qualitymentioning

confidence: 80%

“…where FWHM 0001 (FWHM 1 100 ) is the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane full width at half maxima (FWHM) value measured along [0001] ([1-100]) direction.…”

Section: Crystal Qualitymentioning

confidence: 99%

“…After the HTA treatment, the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane FWHM values of HTA-AlN films are greatly reduced. Both of the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane FWHM values and the degrees of structural anisotropy decrease gradually as the N 2 flux or the sputtering power increasing.…”

Section: Crystal Qualitymentioning

confidence: 99%

“…Developing non-polar DUV LEDs on non-polar aluminum nitride (AlN) templates is considered to be a promising approach to solve the issues mentioned above [4,5]. Here, the 'non-polar' usually refers to the growth along [11][12][13][14][15][16][17][18][19][20] (a-axis) or (m-axis). The growth planes have equal numbers of the Group III and Group V atoms.…”

Section: Introductionmentioning

confidence: 99%

“…Approaches including the epitaxial lateral overgrowth (ELO) [9,10], surface pretreatment [11][12][13], pulsed atomic layer epitaxy [14,15] and pulsed flow growth [16,17] methods have been proposed to effectively improve the surface flatness. More seriously, high density basal plane stacking faults (BPSFs) in the range of 10 5 -10 6 cm −1 are widely observed in the non-polar AlN films, owing to the inherent mismatch problems in heteroepitaxial system [18].…”

Section: Introductionmentioning

confidence: 99%

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Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Cai¹,

Guo²,

Liu³

et al. 2022

Semicond. Sci. Technol.

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A-plane aluminum nitride (AlN) with high quality is crucial to fabricate high-performance non-polar deep-ultraviolet optoelectronic devices. In this work, we prepared crystalline a-plane AlN films on r-plane sapphire substrates by combining reactive magnetron sputtering and high temperature annealing (HTA). The effects of N2 flux and RF sputtering power on the crystal quality, the surface morphology and the in-plane stress state of a-plane AlN films were comprehensively investigated. The results suggest that the properties of high temperature annealed a-plane AlN (HTA-AlN) films positively depend on the initial states of the sputtered AlN (SP-AlN) films. Increasing the N2 flux or the RF sputtering power can improve the crystalline quality of SP-AlN films by reducing the kinetic energy of deposited particles, which facilitates a-plane AlN deposition. A higher N2 flux smoothens the surface morphology due to the relieved bombardment effect, which is confirmed by the enlarged in-plane tensile stress state. However, a higher sputtering power leads to a rougher surface because of the accelerated deposition rate. With optimized sputtering parameters, a high-quality a-plane HTA-AlN template was obtained with full width at half maximum values of (11-20) plane X-ray rocking curves as low as 1188 and 1224 arcsec along [0001] and [1-100] directions, respectively. The surface presents an ordered stripe-like morphology with a root-mean-square value of 0.79 nm. Our work provides a convenient and effective strategy to prepare high quality a-plane AlN templates and accelerate the versatile application of non-polar DUV-LED devices.

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Section: Crystal Qualitymentioning

confidence: 80%

“…where FWHM 0001 (FWHM 1 100 ) is the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane full width at half maxima (FWHM) value measured along [0001] ([1-100]) direction.…”

Section: Crystal Qualitymentioning

confidence: 99%