We report on a kinetic model that describes the degradation of the quantum efficiency (QE) of Cs3Sb and negative electron affinity (NEA) GaAs photocathodes under UHV conditions. In addition to the generally accepted irreversible chemical change of a photocathode’s surface due to reactions with residual gases, such as O2, CO2, and H2O, the model incorporates an intermediate reversible physisorption step, similar to Langmuir adsorption. This intermediate step is needed to satisfactorily describe the strongly non-exponential QE degradation curves for two distinctly different classes of photocathodes –surface-activated and “bulk,” indicating that in both systems the QE degradation results from surface damage. The recovery of the QE upon improvement of vacuum conditions is also accurately predicted by this model with three parameters (rates of gas adsorption, desorption, and irreversible chemical reaction with the surface) comprising metrics to better characterize the lifetime of the cathodes, instead of time-pressure exposure expressed in Langmuir units.