Growth and characterization of short-period silicon isotope superlattices

Shimizu, Yasuo; Itoh, Kohei M.

doi:10.1016/j.tsf.2005.08.394

Cited by 23 publications

(17 citation statements)

References 10 publications

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“…The present study overcomes this challenge by detection of the very small diffusion length in isotope superlattices of Si by Raman spectroscopy. The method has been proven useful in the past for the accurate determination of the self-diffusivity in Ge [11] and characterization of Si isotope superlattices [12,13]. Si self-diffusion is expected to occur predominantly via two types of native defects: self-interstitials (I) and vacancies (V) [9,10,14 -18].…”

mentioning

confidence: 99%

“…A 28 Si n = 30 Si n isotope superlattice with n 20 atomic layers was grown by solid-source molecular beam epitaxy [12,13]. The details of the growth have been described in Ref.…”

mentioning

confidence: 99%

“…The details of the growth have been described in Ref. [13]. In short, the starting substrate was a high resistivity ( > 2000 cm), n-type Si f001g-oriented 2-inch substrate, onto which a buffer layer of 100 nm-thick nat Si ( 28 Si: 92.2%, 29 Si: 4.7%, 30 Si: 3.1%) was formed prior to the growth of the isotope superlattice that composed of alternating layers of isotopically pure 28 Si (99.92%) and 30 Si (99.3%).…”

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confidence: 99%

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Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon

2007

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We have determined silicon self-diffusivity at temperatures 735-875 degrees C based on the Raman shift of longitudinal optical phonon frequencies of diffusion annealed 28Si/30Si isotope superlattices. The activation enthalpy of 3.6 eV is obtained in such low temperature diffusion annealing. This value is significantly smaller than the previously reported 4.95 eV of the self-interstitial mechanism dominating the high temperature region T>>855 degrees C and is in good agreement with the theoretical prediction for the vacancy-mediated diffusion. We present a model, containing both the self-interstitial and the vacancy terms, that quantitatively describes the experimentally obtained self-diffusivity between 735 and 1388 degrees C, with the clear crossover of the two diffusion mechanisms occurring around 900 degrees C.

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confidence: 99%

“…A 28 Si n = 30 Si n isotope superlattice with n 20 atomic layers was grown by solid-source molecular beam epitaxy [12,13]. The details of the growth have been described in Ref.…”

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confidence: 99%

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confidence: 99%

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Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon

2007

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“…10 nm thickness 28 Si layers and 20 nm thickness 30 Si layers are alternately stacked [9,10]. Mass numbers of two layers of Si isotopic superlattice are different, so 28 Si layers can be distinguished from 30 Si layers.…”

Section: Methodsmentioning

confidence: 99%

Reconstruction in Atom Probe Tomography Considering the Cone Angle of Needle-Like Shaped Samples and Evaluation of Reliability

Yukawa

Morita

Karasawa

et al. 2015

e-J. Surf. Sci. Nanotech.

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The present reconstruction method of Atom Probe Tomography (APT) has the problem that the parameter, in particular the shank angle which represents the region the signal of APT is detectable, is adjusted according to the internal length reference of the sample. The reliable APT reconstruction image could not be obtained in the sample without the reference. We propose the method to calculate the value of the shank angle from the shape of sample and the geometric position relationship between the sample and the detector. We compared the APT reconstruction image in this method to the image in the conventional method with the sample of Si isotope superlattice. The result is that APT 3D image by the new method was reconstructed equivalently to the image by the conventional method.

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“…Raman spectroscopy of confined optical phonons revealed that the degree of intermixing between adjacent 28 Si and 30 Si layers was approximately 2 atomic monolayers ͑0.27 nm͒. 28,29 A commercial laser-assisted local-electrode atom probe microscope ͑LEAP3000XSi, Imago Scientific Instruments͒ with a 90 mm flight path and Ͻ12 ps laser ͑532 nm͒ pulse width was employed in this study. The pulse energy and frequency were 0.3 nJ and 500 kHz, respectively.…”

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confidence: 99%

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

Shimizu

Kawamura

Uematsu

et al. 2009

Journal of Applied Physics

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Laser-assisted atom probe microscopy of 2 nm period Si28∕Si30 isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

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Growth and characterization of short-period silicon isotope superlattices

Cited by 23 publications

References 10 publications

Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon

Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon

Reconstruction in Atom Probe Tomography Considering the Cone Angle of Needle-Like Shaped Samples and Evaluation of Reliability

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

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