Growth and characterization of SiC layers obtained by microwave-CVD

Mandracci, Pietro; Ferrero, Sergio; Cicero, Giancarlo; Giorgis, Fabrizio; Pirri, Candido Fabrizio; Barucca, G.; Reitano, R.; Musumeci, Paolo; Calcagno, L.; Fóti, G.

doi:10.1016/s0040-6090(00)01598-4

Cited by 18 publications

(6 citation statements)

References 6 publications

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“…As a result, if the MWCVD process can be applied for the epitaxial growth of 3C‐SiC on Si, the large‐scale fabrication of high‐quality, single‐crystalline, 3C‐SiC film might become a reality, however, even though MWCVD‐based techniques (i.e. electron‐cyclotron‐resonance MWCVD, remote plasma MWCVD) have previously been applied to deposit 3C‐SiC films, only polycrystalline and amorphous SiC films have been obtained, and no epitaxial growth has been achieved 29–33. Therefore, in the present study, we address, for the first time, the possibility of utilizing MWCVD to achieve the low‐temperature, epitaxial growth of 3C‐SiC films on Si wafers.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Zhuang¹,

Zhang²,

Staedler³

et al. 2013

Chemical Vapor Deposition

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Microwave plasma (MW)CVD is used for the first time in the low-temperature, hetero-epitaxial growth of 3C-SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C-SiC film and Si substrate is obtained in the epitaxially grown 3C-SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C-SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large-scale, highquality, single-crystalline 3C-SiC films.

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Section: Introductionmentioning

confidence: 99%

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Zhuang¹,

Zhang²,

Staedler³

et al. 2013

Chemical Vapor Deposition

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“…8 From the experimental point of view, a number of techniques have been used for the film preparation, the most commonly used being chemical vapor deposition, glow discharge, dynamic ion mixing, pulsed laser ablation ͑PLA͒, and rf magnetron sputtering. [9][10][11][12][13][14][15][16][17][18][19][20][21][22] It should be noted that, among them, PLA presents at least two relevant characteristics suitable to obtain device-grade quality thin films at low temperature: an intrinsically high energetic content of species that can be controlled by the laser pulse energy and the possibility to grow hydrogen-free films from a solid precursor.…”

Section: Introductionmentioning

confidence: 99%

Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared Si1−xCx thin films

Neri¹,

Barreca²,

Fazio³

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Si 1 − x C x thin films have been deposited by pulsed laser ablation of a polycrystalline silicon carbide target in vacuum. The influence of the deposition parameters on the optical and structural properties of the samples was investigated by means of Fourier transform IR, Raman, ex situ ellipsometric, x-ray photoelectron, and x-ray absorption near edge structure spectroscopies. Both deposition temperature and laser fluence were increased up to 1150K and 14J∕cm2, respectively. Increasing the two parameters, a better quality of the thin films was observed due to the existence of a crystalline order on a nanometric scale. Nevertheless, at higher deposition temperatures, a graphitic phase occurred inducing a degradation of the optical properties. Such a phase was not observed increasing the laser fluence. The film formation mechanism has also been qualitatively discussed on the basis of the subplantation model proposed by Lifshitz et al. [Phys. Rev. Lett. 62, 1290 (1989); Phys. Rev. B 41, 1046 (1990)].

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“…The presence of the symmetric peak centered at 1455 cm −1 , in contrast to the double band observed for T S = 200, corresponds to the band typically observed in amorphous carbon; 57 a sign of a partial crystallization of carbon clusters. The symmetric band around 1450 cm −1 (T S = 500 °C) could be ascribed to the presence of very small and highly disordered carbon clusters 59,60 or isolated sp 2 bonds dispersed through the a-SiC:H films. 57 In comparison, for series T S = 400 °C and T S = 500 °C, their Raman bands between 1300−1600 cm −1 were deconvoluted into several Gaussians peaks, 28 as shown in Figure 7.…”

Section: Resultsmentioning

confidence: 99%

Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.

Daouahi

Rekik

2012

J. Phys. Chem. C

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The nature of the hydrogen bonds and their influence on film (micro/nano)structure has been investigated as a function of substrate temperature T S (200–500 °C) in hydrogenated amorphous silicon carbide (a-SiC:H) thin films. These films were prepared by radio-frequency magnetron sputtering at a common pressure and high hydrogen dilution in the gas phase mixture (Ar + 80% H2). Infrared absorption and Raman spectroscopy experiments have been carried out to characterize the (micro/nano)structure of different series as a function of T S. The results of Fourier transform infrared spectroscopy indicate that all series are characterized by the presence of the low Si–H n and C–H n bond concentration and no absorption band at 2000 cm–1 attributed to isolated monohydride Si–H can be detected, which suggests that the hydrogen is predominantly bonded as polyhydride groups (Si–H2) n , giving the band at 2090 cm–1. The concentration of the Si–C bond and the crystalline fraction, which increase with increasing T S, show an improvement in the crystallinity of the films. The influence of T S on the growth of crystalline nanograins is studied by Raman spectroscopy. At temperatures T S ≥ 200 °C, these films contain Si–C crystallites in addition to the Si nanocrystals distributed in the amorphous network. The Si crystallite size is unaffected by the increase of T S but the size of graphitic domains is reduced and their distribution becomes more disordered. Results of Raman spectroscopy show also that the high values obtained for the line width of transverse acoustic TA-like band toward low frequencies justifies the deconvolution of infrared spectra taking into account the doublet (845 and 910 cm–1). The results of this paper therefore shed light on the origin of amorphous and nanocrystalline structure in the a-SiC:H thin films, which has been a subject of debate for decades.

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Growth and characterization of SiC layers obtained by microwave-CVD

Cited by 18 publications

References 6 publications

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared Si1−xCx thin films

Effect of Substrate Temperature on (Micro/Nano)Structure of a-SiC:H Thin Films Deposited by Radio-Frequency Magnetron Sputtering.

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