Growth and Characterization of SiC/SiN[sub x]/Si Structures

Abstract

Silicon carbide ͑SiC͒ films were grown on SiN x /Si structures. The SiN x layers were fabricated on Si surface with different thickness by either the nitridation of Si͑111͒ surface with NH 3 or the deposition of thick SiN x films by rf magnetron sputtering technique. The grown films were a single-crystalline 3C-SiC͑111͒ which follows the crystal orientation of Si substrate. The thickness of SiC films grown on SiN x /Si substrates decreased with the increase of the nitridation time as well as the SiN x thickness. The formation of voids was significantly suppressed from SiC/Si interface by the nitridation of Si surface. It was observed that SiC films grown on 100, 300, and 500 nm thick SiN x /Si substrates consisted of columnar grains of SiC crystal. This work suggests that the fabrication of SiC devices can be realized in the SiC/SiN x /Si structure.