Growth and characterization of silicon nanowires catalyzed by Zn metal via Pulsed Plasma-Enhanced Chemical Vapor Deposition

Abstract

This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. 1 Growth and Characterization of Silicon Nanowires Catalyzed by Zn Metal Via Pulsed Plasma-Enhanced Chemical Vapor Deposition AbstractHigh-density silicon nanowires (SiNWs) were grown via Pulsed Plasma-EnhancedChemical Vapor Deposition at 400°C. Zinc (Zn) metal thin films with varying thickness from 10nm to 100nm were used as a catalyst to synthesize the SiNWs. The surface morphology, crystalline structure, and optical properties of the grown SiNWs were investigated. Results indicated that increasing the Zn thickness from 10nm to 100nm led to an increase in wire diameter from 65nm to 205nm, resulting in a reduction of SiNW density. The wires grown with Zn thicknesses of 10 and 80nm exhibited high crystallinity as shown by the X-ray diffraction patterns. Three emission bands (green, blue, and red) were observed in the photoluminescence spectra of the SiNWs prepared using various Zn catalyst thicknesses. The SiNWs prepared using 10 and 80nm Zn thicknesses displayed a sharp Raman peak that corresponded to the first-order 2 transverse optical phonon mode in contrast to the other samples that produced SiNWs with a broad Raman band.

Surface Characteristics of Silicon Nanowires/Nanowalls Subjected to Octadecyltrichlorosilane Deposition and n-octadecane Coating

“…The silicon diffraction peaks appeared at 28.4° (111), 47.3° (220), and 69.27° (400). These peaks showed the crystalline silicon phases, which are commonly observed for silicon nanowires26. In addition, the silver peaks appeared at 38.32° (111) and 44.50° (200).…”

“…They have provided physical insight into various methods for the surface functionalization of silicon nanowires and the analytical performance of silicon nanowires field emission sensors. Al-Taay et al 26. have characterized silicon nanowires catalyzed by zinc metal through a pulsed plasma-enhanced chemical vapor deposition technique.…”

Three-Dimensional Integration of CuO-Si Hierarchical Nanowires for Electrochemical Detection of N2H4

“…The Raman spectrum does not reveal any traces of the Cu­(OH) 2 , indicating the purity of the nanomaterial. Moreover, the peak located at 511 cm –1 was attributed to the transverse-optical Si mode, and the broader peak located at 930 cm –1 corresponded to the second-order optical phonon mode and the second-order transverse acoustic phonon mode of crystalline Si. , …”

“…Moreover, the peak located at 511 cm −1 was attributed to the transverse-optical Si mode, and the broader peak located at 930 cm −1 corresponded to the second-order optical phonon mode and the secondorder transverse acoustic phonon mode of crystalline Si. 51,52 To understand the surface composition, the chemical states and the interaction between CuO and the Si of the CuO-Si HNW nanostructure in the electrochemical study, the XPS analysis was performed. Figure S3 Figure 6a provides the core-level Cu 2p spectrum, having several shakeup satellite peaks.…”

Optical and structural properties of synthesized ZnO nanorods through chemical bath deposition on various substrates

“…1D nanostructured semiconductors, including nanotubes, nanowires, nanorods (NRs), and nanosheets, have been widely used as electronic components because of their unique physical and chemical properties [1,2]. Nanostructures are widely used in numerous technological app1ications, because of their 1D structure with high crystallinity, high surface area-tovolume ratio, and preferred orientation [3,4]. ZnO nanostructures have unique properties, such as wide and direct band gap (3.37 eV), large exciton binding energy (60 meV) at room temperature [5], high electron mobility, high transparency, and high thermal conductivity [6].…”