Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

Abstract

We demonstrate the growth of small band gap (Eg∼0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-μm-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 μm (at 20 K) for lattice matched InGaAsN (N∼2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 μm at 20 K are also reported.

Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony

“…Therefore, lattice-matched alloys are desired. InGaAs(P)N material system lattice matched to InP is predicted to have the cutoff wavelength up to 5 mm [2]. So far InGaAsN pinPDs with the cutoff wavelength of 1.85 mm were fabricated [3,4].…”

Characterization of InGaAsSbN layers grown on InP by MBE

“…However, there have been few studies for characterization of InGaAsN and/or InGaAsSbN layers on InP [1][2][3]. We already reported the effects of growth temperature and As/III flux ratio on crystalline quality of InGaAsN layers on InP [4], and nitrogen composition dependences of photoluminescence and photo-reflectance characteristics of the InGaAsN layers on InP [5].…”

Optical characterization of InGaAsN layers grown on InP substrates

“…Therefore lattice-matched alloys are desired to decrease the dark current. Quaternary material system, InGaAsN lattice-matched to InP substrates, is one of the candidates for the light-absorption layer of such PDs [2]. However, the properties of InGaAsN layers on InP substrates are not well understood.…”