Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection

Heterogrowth of β-(AlxGa1–x)2O3 Thin Films on Sapphire Substrates

“…The Baliga’s figure of β-Ga 2 O 3 is ∼3400, so it has extremely high application potential in high-breakdown and high-power electronic devices. β-Ga 2 O 3 can also be naturally applied to solar-blind photodetectors because its absorption edge is located in the solar-blind region. , The deposition of the β-Ga 2 O 3 film can be realized by atomic layer deposition, chemical vapor deposition, halide vapor phase epitaxy, pulsed laser deposition (PLD), , magnetron sputtering, , and metal–organic chemical vapor deposition (MOCVD). , β-Ga 2 O 3 can also be alloyed with Al atoms to form β-(Al x Ga 1– x ) 2 O 3 to further modulate the band gap. , …”

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

“…Noticeably, with an increase in Sn content, the grain size and the surface roughness become larger. This may relate to the fact that the RMS roughness of the SnO 2 films is larger than that of the Ga 2 O 3 films [ 39 ], so the variation in the RMS roughness corresponds to an increase in the Sn composition [ 8 ].…”

“…Gallium oxide (Ga 2 O 3 ) has received increasing interest during the past decade owing to its intriguing physical properties, such as its excellent transparency [ 1 ], wide bandgap [ 2 ], high radiation resistance [ 3 ], high saturation electron velocity [ 4 ], and the ability for its large-scale single crystal manufacturing by the industrial-grade Czochralski method [ 5 ] and the Floating Zone technique [ 6 ]. Therefore, it can possess many applications, including photocatalysts, transparent conducting oxides [ 7 ], solar-blind UV detectors [ 8 ], high-power and high-voltage devices [ 9 ], and gas sensors [ 10 ]. It is reported that Ga 2 O 3 materials contain five different polymorphs, which are the rhombohedral ( α ), the monoclinic ( β ), the defective spinel ( γ ), the cubic ( δ ), and the orthorhombic ( ε ) structures [ 11 ].…”

“…It is found that the electron concentration and mobility are both improved by a Van der Pauw Hall analysis. Previous researches involve the preparation of Sn-doped thin films by plasma-assisted molecular beam epitaxy (MBE) [ 17 , 18 ], chemical vapor deposition (CVD) [ 8 , 19 ], metal-organic vapor phase epitaxy (MOVPE) [ 20 ], hydrostatic press [ 21 ], and so on; in these studies, the electrical performance is the primary concern. However, there is no systematic analysis of the change in chemical state, microstructure evolution, and the bandgap structure of the Sn-doped film.…”

Current advances in solar-blind photodetection technology: using Ga2O3 and AlGaN

“…Further, to attain high spectral selectivity, Si ions were implanted in the β-Ga 2 O 3 film to increase the contact resistance between the Ga 2 O 3 film and Ti/Au electrodes, achieving reproducible responses with a rise time constant and decay time constant of 0.58 s and 1.2 s, respectively. 96 It was observed that several processes, such as carrier multiplication, 95 impurity doping 105,106 and the use of Zener diodes, 107 can enhance the optical response of the device. Cui et al 100 fabricated a series of SB PDs based on β-Ga 2 O 3 thin films grown on a c-plane sapphire substrate at different growth temperatures.…”