Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

Lee, Sung‐Nam; Paek, H. S.; Kim, Hyonchol; Kim, K. K.; Cho, Yong-Hoon; Jang, T.; Park, Y.

doi:10.1016/j.jcrysgro.2008.05.056

Cited by 9 publications

(3 citation statements)

References 12 publications

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“…[1][2][3][4] Furthermore, owing to the higher thermal stability, using AlInGaN as the protection layer is effective to suppress the generation of non-radiative recombination centers in multiple quantum wells (MQWs) caused by thermal damage in the ramp-up process of metalorganic chemical vapor deposition (MOCVD). [5] Accordingly, AlInGaN is an ideal material for minimizing mismatch-induced strain and enhancing band offset in GaN-based heterostructure. [6] At present, most researchers concentrate on the enhanced luminescence efficiency for InGaN-based MQWs with different polarization-matched barriers.…”

Section: Introductionmentioning

confidence: 99%

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Chen

Jiang

et al. 2017

Chinese Phys. B

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A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.

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Section: Introductionmentioning

confidence: 99%

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Chen

Jiang

et al. 2017

Chinese Phys. B

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“…Although room-temperature ZT values of In 0:1 Ga 0:9 N:(Er+Si) and Al 0:1 In 0:1 Ga 0:8 N:(Er+Si) are similar, we preferred Al 0:1 In 0:1 -Ga 0:8 N:(Er+Si) alloys because, for the same In content, AlInGaN alloys have been found more thermally stable than InGaN alloys at high temperature. 23) The Seebeck coefficient S and electrical conductivity of an optimized quaternary alloy, Al 0:1 In 0:1 Ga 0:8 N:(Er+Si), were measured simultaneously from room temperature to about 1055 K. As shown in Fig. 3, as temperature was increased from room temperature to 1055 K, S value was increased from 124 to 193 V/K but decreased from 200 to 135 (Ácm) À1 .…”

mentioning

confidence: 98%

“…However, thermal stability of AlInGaN at high temperature is better than that of InGaN. 23) We have checked the thermal stability of AlInGaN epilayers deposited on GaN/AlN/sapphire templates by measuring the structural and electronic transport properties before and after annealing the epilayers at 1010 K in air for 3 h. It was found that AlInGaN epilayers with In-contents above 0.3 partially decomposed, while those with In-contents below 0.2 retain their original properties after annealing. Thus, we limit the In-content to 10% for TE properties study.…”

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confidence: 99%

Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

Pantha

Feng

Aryal

et al. 2011

Appl. Phys. Express

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The potential of Er-doped Al x In 0:1 Ga 0:9Àx N quaternary alloys as high-temperature thermoelectric (TE) materials has been explored. It was found that the incorporation of Er significantly decreased the thermal conductivity () of Al x In 0:1 Ga 0:9Àx N alloys. The temperature-dependent TE properties were measured up to 1055 K for an Er and Si co-doped n-type Al 0:1 In 0:1 Ga 0:8 N alloy. The figure of merit (ZT ) showed a linear increase with temperature and a value of about 0.3 at 1055 K was estimated. The ability to survive such high temperature with reasonable TE properties suggests that low-In-content Er and Si-doped AlInGaN alloys are potential candidate of high-temperature TE materials.

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Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices

Chen

Xie

et al. 2017

Appl. Phys. A

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Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells

Cited by 9 publications

References 12 publications

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices

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