Growth and characterization of tin sulphide thin films by chemical bath deposition using ethylene diamine tetra-acetic acid as the complexing agent

Effect of annealing on structural and optical properties of Cu2ZnSnS4 thin films grown by pulsed laser deposition

“…There are no other secondary peaks in the Raman spectra in the range 120-500 cm -1 for the CZTS films subjected to LAN, except for the small shoulder at about 135 cm -1 , which can be identified as mixed phases of copper sulphides [25]. Raman spectra of the samples upon SVA at high temperatures (T ann =450-500°C) exhibit two small secondary peaks at 183 cm -1 and 218 cm -1 attributed to SnS phase [26]. This observation is also consistent with XRD results.…”

Growth of Cu2SnS3 thin films by a two-stage process: structural, microstructural and optical properties

“…These layers were deposited at room temperature. SnS films were deposited from an optimized bath developed by us earlier [29] using EDTA as the complexing agent. The bath contains stannous chloride The deposition time to obtain the desired 150 nm thick CuS film was 2 h. After the deposition, the substrates were removed from the bath, washed with distilled water, naturally dried and kept in a vacuum desiccator until they were transferred to a tubular furnace for annealing in the second stage.…”

Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides

“…The effect of changes in the S source concentration on the band gap of o-SnS films is controversial until the present. A reduction in band gap from 1.70 eV to 1.25 eV with increasing TA concentrations was reported in [ 200 ], although no significant change in band gap was found with TA concentration in [ 198 ]. On the other hand, no studies in the literature have focused on the influence of S precursor concentration on the properties of c-SnS, SnS 2, and Sn 2 S 3 films.…”

“…Furthermore, the S precursor concentration can influence the morphology and phase formation of o-SnS films ( Figure 7 e). A higher TA concentration stimulates the formation of multi phases such as Sn 2 S 3 and Sn 3 S 4 (Sn 2 S 3 + SnS → Sn 3 S 4 ) [ 209 ] and a lower TA concentration assists the growth of single-phase o-SnS films, but with lower crystallinity [ 142 , 198 ]. A TA concentration of 0.1 M is preferable for the deposition of a single-phase, polycrystalline o-SnS with (101) preferred orientation [ 198 ], and a ST concentration of 0.75 M is advisable for (111)/(040) preferred orientation ( Figure 7 f).…”

“…A higher TA concentration stimulates the formation of multi phases such as Sn 2 S 3 and Sn 3 S 4 (Sn 2 S 3 + SnS → Sn 3 S 4 ) [ 209 ] and a lower TA concentration assists the growth of single-phase o-SnS films, but with lower crystallinity [ 142 , 198 ]. A TA concentration of 0.1 M is preferable for the deposition of a single-phase, polycrystalline o-SnS with (101) preferred orientation [ 198 ], and a ST concentration of 0.75 M is advisable for (111)/(040) preferred orientation ( Figure 7 f). The effect of changes in the S source concentration on the band gap of o-SnS films is controversial until the present.…”