Growth and characterization of tungsten and molybdenum-doped ReSe2 single crystals

Hu, Sheng; Lin, Syuan-Wei; Tiong, K. K.; Yen, P. C.; Huang, Y. S.; Ho, Ching‐Hwa; Liao, P.C.

doi:10.1016/j.jallcom.2004.04.009

Cited by 16 publications

(10 citation statements)

References 13 publications

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“…Doping of 2D LCMs has been widely reported. For example, Hu et al . have shown that doping of ReSe 2 with a small amount of Mo and W can result in an increased carrier concentration and better electrical conductivity; Dumcenco et al .…”

Section: Introductionmentioning

confidence: 99%

First‐Principles Study on Doping of SnSe₂ Monolayers

et al. 2016

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Doping is a vitally important technique that can be used to modulate the properties of two-dimensional materials. In this work, by using first-principles density functional calculations, we investigated the electrical properties of SnSe2 monolayers by p-type/n-type and isoelectronic doping. Substitution at Sn/Se sites was found to be easy if the monolayer was grown under Sn-/Se-poor conditions. Substitutions at Sn sites with metallic atoms (e.g. Ga, Ge, In, Bi, Sb, Pb) resulted in positive substitution energies, which indicated that they were not effective doping candidates. For substitutions at Se sites with nonmetallic atoms, no promising candidates were found for p-type doping (e.g., N, P, As). Among these, N and As showed positive substitution energies. Although P had a negative substitution energy under Sn-rich conditions, it introduced trap states within the band gap. For n-type doping (e.g., F, Cl, Br), all the calculated substitution energies were negative under both Sn- and Se-rich conditions. Br was proven to be a promising candidate, because the impurity introduced a shallow donor level. Finally, for isoelectronic doping (e.g., O, S, Te), the intrinsic semiconducting features of the SnSe2 monolayer did not change, and the contribution from the impurity to the states near the band edge increased with the atomic number.

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Section: Introductionmentioning

confidence: 99%

First‐Principles Study on Doping of SnSe₂ Monolayers

et al. 2016

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“…Compared with previous reports, the indirect band gaps of intentionally doped ReSe 2 are found to be a little smaller than that of undoped ReSe 2 . 21) The two polarization-dependent transitions located in the energy range between 1.35 and 1.45 eV are the excitonic transitions E ex 1 and E ex 2 . It is clearly noticed that the intensity of E ex 1 decreases as increasing the polarization angle from ¼ 0 to 90 , while that of E ex 2 goes in the reverse way.…”

Section: Resultsmentioning

confidence: 99%

“…The increase of the conductivity in this ranges is caused mainly by the ionization effect of impurities. 21) The activation energy of impurity can be extracted from the temperature dependence of conductivity using the equation given by 31) …”

Section: Resultsmentioning

confidence: 99%

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Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Jian

Lin

et al. 2013

Jpn. J. Appl. Phys.

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Single crystals of Au-and Ag-doped ReSe 2 (ReSe 2 :Au and ReSe 2 :Ag) have been grown by chemical vapor transport (CVT) method using iodine as a transporting agent. The optical properties are studied by absorption and polarized-thermoreflectance (PTR) spectroscopy at different polarization angles in the temperature range between 12 and 300 K. The direct band-edge excitonic transitions (E ex 1 , E ex 2 , E ex 3 , and E ex s ) have been clearly revealed for the first time in the absorption spectra when the samples are made thin enough. The dominant E ex 1 and E ex 2 excitonic transitions gets strongest as the polarization is parallel and perpendicular to the b-axis, respectively. The parameters that describe the temperature dependence of the excitonic transition energy and the broadening function are extracted and discussed. We have also performed electrical conductivity and Hall measurements at different temperatures to derive the activation energy ( 95 and 50 meV for ReSe 2 :Au and ReSe 2 :Ag, respectively). #

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“…14 A few works concerning the doping effect on the properties of ReX 2 compounds were reported, indicat-ing that doping leads not only to changes in electrical properties but also to a redshift in the indirect energy gap while the direct band-edge excitonic transition energies remain practically unchanged. [15][16][17] In this paper, we report on the polarization-dependent optical properties study of ReSe 2 : Au single crystals in the temperature range between 15 and 300 K. The indirect bandedge transitions were studied by means of polarizationdependent transmittance. The polarization-dependent piezoreflectance ͑PzR͒ and photoreflectance ͑PR͒ measurements were used for the determination of the direct band-edge excitonic transitions.…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of Au-doped rhenium diselenide single crystals

Dumcenco

Huang

Liang

et al. 2008

Journal of Applied Physics

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In this paper, the optical properties of Au-doped rhenium diselenide (ReSe2:Au) single crystals have been reported. The doping effects of the material were characterized by polarization-dependent transmittance, piezoreflectance (PzR), and photoreflectance (PR) measurements in the temperature range of 15–300 K. The indirect energy gap of ReSe2:Au shows a slight redshift with respect to the undoped sample. The low temperature PzR and PR spectra reveal an E1ex feature at E∥b polarization as well as two features, E2ex and E3ex, at E⊥b polarization. The angular dependence of the excitonic feature amplitudes agrees well with Malus’ law. In comparison with the undoped ReSe2, the excitonic transition energies remain practically unchanged, while the broadening parameter of the excitonic transition features slightly increases due to impurity scattering. In addition, the parameters that describe the temperature variations of the band-edge excitonic transitions were evaluated and discussed.

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Growth and characterization of tungsten and molybdenum-doped ReSe2 single crystals

Cited by 16 publications

References 13 publications

First‐Principles Study on Doping of SnSe₂ Monolayers

First‐Principles Study on Doping of SnSe₂ Monolayers

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂

Optical characterization of Au-doped rhenium diselenide single crystals

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Growth and characterization of tungsten and molybdenum-doped ReSe2 single crystals

Cited by 16 publications

References 13 publications

First‐Principles Study on Doping of SnSe2 Monolayers

First‐Principles Study on Doping of SnSe2 Monolayers

Optical and Electrical Properties of Au- and Ag-Doped ReSe2

Optical characterization of Au-doped rhenium diselenide single crystals

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Product

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First‐Principles Study on Doping of SnSe₂ Monolayers

First‐Principles Study on Doping of SnSe₂ Monolayers

Optical and Electrical Properties of Au- and Ag-Doped ReSe₂