Growth and Characterization of Type I Quantum Wells Based on ZnCdSe/ZnTe Type II Heterostructures Confined within ZnSe Barriers

Banthí-Barcenas, Juan Carlos; Šutara, F.; Hernández‐Calderón, I.

doi:10.1007/s11664-018-6395-2

Journal of Elec Materi

2018

DOI: 10.1007/s11664-018-6395-2

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Growth and Characterization of Type I Quantum Wells Based on ZnCdSe/ZnTe Type II Heterostructures Confined within ZnSe Barriers

Juan Carlos Banthí-Barcenas

F. Šutara

I. Hernández‐Calderón

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Cited by 2 publications

References 13 publications

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Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures

Paul,

Chattopadhyay,

Biswas

et al. 2024

Semicond. Sci. Technol.

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A class of quantum dots known as Core-Shell Quantum Dots (CSQDs) where a lower band gap material is enclosed by a higher band gap material, are highly confined nanoparticles, that project altered properties like enhanced carrier confinement, stability, and reduced recombination. The strain generated, due to the formation of a heterojunction-like structure near the CSQD boundary, has a direct impact on its opto-electronic properties by altering the band positions of the materials. In this work, we aimed to understand the impact of strain generated near such heterojunction due to the presence of two different materials as core and shell on its optical band lineup to comprehend the observed enhanced optical properties of such structures. Here, we have assumed a general model comprising ZnTe core surrounded by a ZnSe shell. Initially, to start, the CSQD structure was considered with a core size of 3nm and a shell of 1.2 nm. A crossover from type-I to type-II in optical band line up was observed with an increase in shell thickness. The estimated value of the highest conduction band offset ~60% was obtained for a shell width of 1.2 nm, i.e. the unstrained state, while the largest valence band offset ~100% was obtained for the shell width of 1 nm.

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Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures

Paul,

Chattopadhyay,

Biswas

et al. 2024

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Quantum well interband semiconductor lasers highly tolerant to dislocations

Cerutti¹,

Thomas²,

Rodriguez³

et al. 2021

Optica

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III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot lasers can reasonably operate at the high dislocation densities generated by the III-V-on-Si heteroepitaxy, which induces high non-radiative carrier recombination rates. Here we propose a strategy based on a type-II band alignment to fabricate quantum well lasers highly tolerant to dislocations. A mid-IR GaInSb/InAs interband cascade laser grown on Si exhibits performances similar to those of its counterpart grown on the native GaSb substrate, in spite of a dislocation density in the 10 8 c m − 2 range. Over 3800 h of continuous-wave operation data have been collected, giving an extrapolated mean time to failure exceeding 312,000 h. This validates the proposed strategy and opens the way to new integrated laser development.

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Growth and Characterization of Type I Quantum Wells Based on ZnCdSe/ZnTe Type II Heterostructures Confined within ZnSe Barriers

Cited by 2 publications

References 13 publications

Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures

Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures

Quantum well interband semiconductor lasers highly tolerant to dislocations

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