Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Abstract

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH4‐H2 atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.

Discriminating between Different Heavy Metal Ions with Fullerene-Derived Nanoparticles

“…From the spectra of C, the KVV region was acquired by using X-rays and electron beam (see Figure 1 d), and the values of D parameter were determined to 12.7 and 20.9 eV, respectively. This change of the D parameter from the diamond-like value obtained with X-rays to graphitic one with electron beam indicates that the main configuration of C–C bonds corresponds to graphene [ 37 , 41 ]. The FT-IR and 13 C NMR spectra (reported in Ref.…”

Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD

“…In the annealing treatment, pure hydrogen was supplied to the vial at the flow rate of 5 NL/h for two hours, while the CVD atmosphere was a H 2 -CH 4 gas mixture, with CH 4 content of 3 vol%. Further experimental details are reported elsewhere [20]. To investigate which were the best conditions for graphene growth, surface finishing of Cu foils and CVD reaction time were changed.…”

From single-layer graphene to HOPG: Universal functionalization strategy with perfluoropolyether for the graphene family materials

“…Few-layer graphene was grown on Ni foil according to the procedure adopted in previous works [40,41].…”