Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy

Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy

“…The details of this system have been described elsewhere [14]. DMZn and DETe were used as source materials and H 2 as carrier gas.…”

“…More studies are needed for obtaining high-quality ZnTe epilayer to meet the requirements of optoelectronic device applications. We have shown that high-crystalline quality ZnTe heteroepitaxial layers with 103 arcsec of the full-width at halfmaximum value of the X-ray rocking curve for (4 0 0) reflection can be grown on (1 0 0) GaAs substrates by a home-built MOVPE using dimethylzinc (DMZn) and diethyltelluride (DETe) as the source materials [14]. In this article, we present the surface morphology and optical properties of the heteroepitaxial ZnTe layers on (1 0 0) GaAs substrates by MOVPE.…”

Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE

“…The results can be qualitatively explained as follows. In the low growth temperature region around 390 °C, there is sufficient precursor concentration to compete with the surface reaction; however, the adsorbed precursors have no activation energy enough to occupy the positions of potential minima, thus leading to deterioration of the crystallinity of sample A 11. An increasing growth temperature (420 °C) may improve crystallinity of the ZnTe epilayers by enhancing recrystallization of the adsorbed precursors due to the coalescence of islands by increasing the surface and volume diffusion.…”

“…ZnTe epilayers were grown by the home‐built MOVPE at atmospheric pressure on (100) GaAs substrates with the substrate (growth) temperatures of 390 (sample A), 420 (sample B), and 440 °C (sample C). The details of this system have been described elsewhere 11. DMZn and DETe were used as source materials and H 2 as carrier gas.…”

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

“…MOVPE is a promising growth technique for obtaining epitaxial layers, and is suitable for mass production. Here, to obtain a high-quality ZnTe heteroepitaxial layer, a ZnTe epilayer grown on (100) GaAs substrate is prepared by using the MOVPE system under suitable growth conditions, [5,13] while a ZnTe bulk crystal grown by the vertical Bridgman growth method is also presented for comparison. Photoluminescence (PL) measurement results from these two samples indicate that it is possible to fabricate a high-crystalline quality ZnTe heteroepitaxial layer by the MOVPE growth technique.…”