Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells

Razykov, T. M.; Bosio, A.; Ergashev, B.; Kouchkarov, K.M.; Romeo, Alessandro; Romeo, N.; Yuldoshov, R. T.; Baiev, M.; Makhmudov, M. A.; Bekmirzoyev, J. G.; Хуррамов, Р.; Fazylov, E.

doi:10.1016/j.solener.2019.09.072

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…EXPERIMENTAL DETAILS Film preparation. The preparation of ZTSe films by the CMBD method is described in detail in [12]. SnSe and ZnSe powders of semiconductor purity (99.999%) were used as precursors, which were evaporated in a hydrogen flow at atmospheric pressure.…”

Section: Solar Engineering Materials Sciencementioning

confidence: 99%

Surface Morphology and Phase Composition of (Zn,Sn)Se Thin Films, Obtained by Chemical-Molecular Beam Deposition

Razykov¹,

Kuchkarov

Тиванов

et al. 2021

Appl. Sol. Energy

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Section: Solar Engineering Materials Sciencementioning

confidence: 99%

Surface Morphology and Phase Composition of (Zn,Sn)Se Thin Films, Obtained by Chemical-Molecular Beam Deposition

Razykov¹,

Kuchkarov

Тиванов

et al. 2021

Appl. Sol. Energy

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“…As studies of recent years have shown, an intermediate layer is formed in a heterogeneous metal-semiconductor system, which can significantly affect the output parameters of the entire structure and is largely determined by the structural and morphological characteristics of the metal, which affect the intensity of diffusion processes and phase formation in transition layers [1][2][3][4][5]. Therefore, further study of the actual structure of a Schottky barrier diode based on pCdTe is not only of scientific but also of practical interest [6].…”

Section: Introductionmentioning

confidence: 99%

Properties of the transition layer of the structure of the schottky barrier Al-CdTe-Mo

Utamuradova,

Daliev,

Daliev

et al. 2023

E3S Web of Conf.

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The composition and morphology of the n-Al2O3 transition oxide layer at the Al-CdTe interface and the n-MoO3 oxide layer at the CdTe–Mo interface were studied in this work. The Schottky barrier was formed by depositing a polycrystalline p-CdTe layer by a gas-transport reaction in a hydrogen flow onto a Mo substrate. The Schottky barrier was obtained by vacuum deposition of an Al metal layer on the p-CdTe surface. X-ray diffraction phase analysis of the Al–p-CdTe–Mo structure made it possible to establish the real structure, which has the real structure of Al– Al2O3–p-CdTe–MoO3. Based on a scanning electron microscope (SEM), the composition of the Al-p-CdTe structure was studied, where Al is 1.7% Wt, Te is 52.3% Wt, and Cd is 46.0% Wt. The current-voltage characteristics of the Al-CdTe-Mo Schottky barrier in the forward and reverse directions have been studied. The influence of the MoO3 compound layer, which is a wide-gap semiconductor with an n-type orthorhombic structure with a band gap Eg = 2.68 eV, has been revealed. Based on the current-voltage characteristics of the structure, the n-MoO3 layer is determined by smoothing the barrier between the metal and the semiconductor, which affects the mechanism of charge transfer in the structure. The MoO3 compound is a source of electron injection, which is formed during the growth of p-CdTe between the layers of the Mo substrate and the CdTe polycrystalline film. For all samples in the spectral range 190÷900 nm, the absorption edge of Al2O3 films is not observed, which indicates a larger band gap of the oxide Eg ≥ 6.5 eV.

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“…Coatings 2022, 12, 5 2 of 9 So far, the CMBD method has shown that ZnTe, CdS 1−x Te x , CdTe, SnSe, SbSe, Zn x Sn 1− xSe, and other thin-film polycrystalline layers can be obtained and used for efficient photovoltaic and optoelectronic devices [13][14][15][16][17].…”

mentioning

confidence: 99%

Optical and Recombination Parameters of CdS1−xTex Thin Films Obtained by the CMBD Method

et al. 2021

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This paper presents the results of the photoacoustic, SEM, and surface photovoltage experiments performed on the series of CdS1−xTex thin films. These CdS1−xTex (0 ≤ x ≤ 1) thin films were obtained on the glass substrate by the chemical molecular beam deposition (CMBD) method. The polycrystalline character of these films was revealed by SEM pictures. From the experimental optical characteristics, the optical absorption coefficient spectra of the samples and values of their energy gaps vs. their composition were determined. From the surface photovoltage characteristics, the diffusion lengths of the carriers were also determined.

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Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells

Cited by 7 publications

References 6 publications

Surface Morphology and Phase Composition of (Zn,Sn)Se Thin Films, Obtained by Chemical-Molecular Beam Deposition

Surface Morphology and Phase Composition of (Zn,Sn)Se Thin Films, Obtained by Chemical-Molecular Beam Deposition

Properties of the transition layer of the structure of the schottky barrier Al-CdTe-Mo

Optical and Recombination Parameters of CdS1−xTex Thin Films Obtained by the CMBD Method

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