Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Ryou, Jae‐Hyun; Dupuis, R. D.; Reddy, C. R. R. M.; Narayanamurti, V.; Mathes, David T.; Hull, R.; Mintairov, A. M.; Merz, J. L.

doi:10.1007/s11664-001-0085-0

Cited by 8 publications

(2 citation statements)

References 16 publications

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“…Moreover, the size uniformity is better when the growth temperature is lower. Unlike our previous growths, in which the growth temperature for the In 0.5 Al 0.5 P matrix layers and the QDs is the same, 16 we did not find any large dislocated islands on the surface of samples grown at temperatures Յ630°C even after an extensive AFM survey. This indicates that the two-step growth method effectively improves the morphology of InP QDs.…”

Section: Methodscontrasting

confidence: 94%

Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition

Zhang

Heller

Noh

et al. 2003

Journal of Elec Materi

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We report on the growth of InP self-assembled quantum dots (QDs) on In 0.5 Al 0.5 P matrices by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs substrates. The effects of the growth temperature and V/III-precursor flow ratio on the areal density and the cathodoluminescence (CL) properties of the grown QDs were systematically studied. We found that, when the growth temperature is Յ630°C, coherent QDs as well as large dislocated InP islands can be observed on the matrix surface. However, by using a two-step growth method, i.e., by growing the InAlP matrix layer at higher temperatures and growing InP QDs at lower temperatures, the formation of large dislocated islands can be effectively suppressed. Moreover, the areal density of the InP QDs is increased as the QD growth temperature is reduced. Furthermore, we found that the V/III ratio used in growing QDs and in growing the InAlP matrix layers has a quite different effect. In growing QDs, decreasing the V/III ratio results in an increase in the CL intensity and a decrease in CL line width; while in growing the InAlP matrix layers, increasing the V/III ratio results in an increase in the CL intensity of the InP QDs.

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Section: Methodscontrasting

confidence: 94%

Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition

Zhang

Heller

Noh

et al. 2003

Journal of Elec Materi

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“…Additionally, the matrix material affects the optical properties of SAQD structures. Recently, we studied the growth of InP SAQDs on InAIGaP matrix layers and the effect of coupling quantum dot states with the electronic states ofthe InGaP quantum well [20,21,22,23].…”

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confidence: 99%

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

et al. 2001

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We describe the operation of lasers having active regions composed of InP selfassembled quantum dots embedded in In 0 . 5 A1 0 . 3 Ga 0 . 2 P grown on GaAs (100) substrates by MOCVD. InP quantum dots grown on 1i0. 5 A1 0 3 Ga 0 . 2 P have a high density on the order of about 1-2x10 cm2 with a dominant size of about 10-15 nm for 7.5 ML growth.[ I ] These In 0 .A1 0 . 3 Gao. 2 P/]nP quantum dots have previously been characterized by atomic-force microscopy, high-resolution transmission electron microscopy, and photoluminescence.[2] We report here the 300K operation of optically pumped red-emitting quantum dots using both double quantum-dot active regions and quantum-dot coupled with InGaP quantum-well active regions. Optically and electrically pumped 300K lasers have been obtained using this active region design; these lasers show improved operation compared to the lasers having QD-based active regions with threshold current densities as low as JJ, -0.5 KA/cm 2 .

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Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition

Ryou

Dupuis

2003

Journal of Elec Materi

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INTRODUCTIONQuasi zero-dimensional semiconductor quantumdot (QD) structures having delta-function distribution of the density of states and the discrete energy levels of carriers induced by three-dimensional quantum confinement provide the potential for more efficient light emitting diodes and lasers employing quantum dots as an active medium. 1,2,3 The direct growth technique of coherently strained defect-free self-assembled quantum dots (SAQDs) 4 on planar substrates using the coherent StranskiKrastanov growth mode 5 offers the potential to realize quantum-dot-based devices with improved performance, which has been theoretically predicted. 1 Also, due to its intrinsic strain-induced growth mode, self-assembled quantum dot growth can overcome the limitations of the requirement for lattice matching between the substrate and the active quantumdot layer, making it possible to produce bandgapengineered high-quality materials, hence, providing a wider wavelength range for high-efficiency light emitters. Especially, III-Phosphide SAQD structures can be used for light emitters operating in the visible spectral region, depending on the size and composition of the quantum dots. Considering the "blue shift" effect of the emission from the SAQDs induced from multiple orders of quantum confinement and compressive strain on QDs, binary and ternary IIIPhosphide SAQD structures have a potential to extend the wavelength of light emitters to the yellow or green spectral regions.Binary InP SAQDs have been generally grown on GaAs or GaP substrates 6 (for InP on GaAs and GaP substrates, the lattice mismatches are ϳ3.8% and ϳ7.7%, respectively). In the structures having active regions containing InP SAQDs on GaAs substrates, InP SAQDs are generally grown on an In 0.49 Ga 0.51 P matrix layer by molecular beam epitaxy (MBE) 7 or by metalorganic chemical vapor deposition (MOCVD). 8,9 We have optimized the MOCVD growth conditions of InP SAQDs on In 0.49 Al 0.51 P 10,11 and In 0.49 (Al 0.6 Ga 0.4 ) 0.51 P 12 matrix layers. Growth parameter optimization of binary InP SAQDs has led to a high dot density (ϳ10 10 cm Ϫ2 ) and dislocation-free SAQDs having sizes controllable from ϳ5 nm to ϳ20 nm average We report the characteristics of ternary InAlP and InGaP self-assembled quantum dots grown by metalorganic chemical vapor deposition. The structural and optical properties of these ternary quantum dots are compared with the characteristics of binary InP quantum dots grown under similar conditions. Because these ternary quantum dots have different bandgaps, strain, and composition compared to binary InP quantum dots, the ternary quantumdot optical and physical properties are markedly different. The quantum-dot structures are grown uncapped (exposed QDs) and capped (embedded QDs) and characterized by atomic force microscopy (AFM) and photoluminescence (PL). InAlP quantum dots have higher densities and smaller sizes and InGaP quantum dots have smaller densities, as compared with InP quantum dots grown under similar conditions. Also, a random and b...

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Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates

Cited by 8 publications

References 16 publications

Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition

Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition

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