Growth and current–voltage characterization of ZnTe/CdTe heterojunctions

One-dimensional nanoferroic rods; synthesis and characterization

“…Besides, the particles have almost rod shape with average particle size 116 nm . It is important to note that the average particle size estimated by AFM images is larger than the size calculated by the Debye-Scherrer formula [18], pointing out a possible polycrystalline nature of BaTiO 3 grains. The surface roughness determined from …”

“…Figure (4) reveals the calculated crystallite size distribution at different diffraction angle (2θ). The crystallite size (t) was calculated from X-ray broadening of the main peak (110) using Debye-Scherer's equation [18]; t = 0.89 λ / β cosθ; β is the FWHF and λ is the wavelength of the radiation.…”

Growth and characterisation of n- and p-type ZnTe thin films for applications in electronic devices

“…Zinc Telluride (ZnTe) happens to be one of the II-VI binary compound semiconductors which find numerous applications in optoelectronic devices, switching devices and macro-electronic devices such as solar panels [1][2][3][4]. It is also a direct bandgap semiconductor with bandgap energy of 2.20-2.26 eV [5,6]. Over the years, ZnTe semiconductors have found a useful application as a p-type window material in hetero-junction solar cells fabricated from chalcogenide semiconductors such as CdS [3], CdSe [4] and CdTe.…”

“…Over the years, ZnTe semiconductors have found a useful application as a p-type window material in hetero-junction solar cells fabricated from chalcogenide semiconductors such as CdS [3], CdSe [4] and CdTe. p-ZnTe is also a promising candidate for ZnTe/CdTe heterojunction device structures [6] and for development of graded bandgap solar cells. Apart from being used as a window material, thin film ZnTe semiconductors have also found a useful application as a back contact material to CdTebased solar cells [7].…”

Influence of temperature and illumination on the characteristics of nanocrystalline Ga0.29 Al0.71As based heterojunction prepared by MOCVD

“…Tunneling dominates the current flow mechanism only for the highly doped materials as well as the gradient of the J-V curves is constant with temperature independent [29,30]. But in the present case, the n and p types are not highly doped and the gradient of the J-V curves is thermally dependent.…”