Growth and device applications of III-nitrides by MBE

Moustakas, T. D.; Iliopoulos, E.; Sampath, Anand V.; Ng, H. M.; Doppalapudi, D.; Misra, M.; Korakakis, D.; Singh, R.

doi:10.1016/s0022-0248(01)00625-x

Cited by 51 publications

(47 citation statements)

References 40 publications

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“…Inset shows experimental reflectivity spectra from this DBR along with simulation results based on the transition matrix method. [153] Figure 32. Schematics of investigated DBRs with (a) square, (b) sinusoidal, (c) triangular, and (d) sawtooth AlGaN grading profiles.…”

Section: Distributed Bragg Reflectorsmentioning

confidence: 99%

“…[152] The cross-section TEM micrograph of a DBR stack consisting of 20.5 periods of AlN/GaN with thickness of 62.3 and 40.3 nm, respectively, is shown in Figure 31. [153] The reflectivity spectra of this DBR structure is also shown in the inset along with simulation results based on the transmission matrix method. The peak reflectance of 99% occurred at a center wavelength of 465 nm and the reflectance bandwidth is 45 nm.…”

Section: Distributed Bragg Reflectorsmentioning

confidence: 99%

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Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Moustakas

2016

MRS Communications

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This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films and their quantum wells (QWs), grown by plasmaassisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AlGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.

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Section: Distributed Bragg Reflectorsmentioning

confidence: 99%

Section: Distributed Bragg Reflectorsmentioning

confidence: 99%

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Moustakas

2016

MRS Communications

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“…Until very recently, the key achievements and developments in the field of InGaN laser diodes have been made by the metal-organic vapour-phase epitaxy (MOVPE) technique [1,2].I n spite of many potential advantages for MBE growth, such as in situ monitoring techniques [3][4][5], the low quantum efficiency of MBEgrown optoelectronic structures compared with MOVPE led many researchers to conclude that MBE cannot compete with MOVPE. It was also commonly believed that the only solution for MBE would be to bring the growth conditions as close as possible to the MOVPE, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…However, the corrosive nature of ammonia compounded by its large flows creates additional hazards and technological challenges, and also leads to undesirable high hydrogen background during the epitaxial process. In the more widely employed plasma-assisted MBE (PAMBE) [5], purified nitrogen gas is activated using an RF-plasma and supplied to the growth surface at typical flow rates of 1-2 sccm. Early experimental results [7] showed that unlike ammonia MBE, PAMBE requires group III-rich conditions to achieve good material quality.…”

Section: Introductionmentioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission Skierbiszewski, C.; Wasilewski, Z.R.; Grzegory, I.; Porowski, S.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 1C.In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.

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“…In spite of MBE's many potential advantages, such as much better qual-ity of interfaces, sharper doping profiles and superior in situ growth monitoring capabilities [3][4][5], the considerably inferior optical quality of grown layers, when compared to similar structures grown by MOVPE, fueled widespread belief that this technique would never become a viable alternative in the field of GaN based optoelectronics. Only very recently the room temperature, pulsed operation of MBE-grown laser diodes (LDs) with 400 nm emission wavelength was demonstrated [6].…”

Section: Introductionmentioning

confidence: 99%

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Skierbiszewski

2005

Acta Phys. Pol. A

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The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism -adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600−750• C, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm 2 /(V s) at 4.2 K and 2500 cm 2 /(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5 µm wavelengths like electro-optical modulators or all-optical switches.

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Growth and device applications of III-nitrides by MBE

Cited by 51 publications

References 40 publications

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

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