Growth and Doping Modeling of SiC‐CVD in a Horizontal Hot‐Wall Reactor

Nishizawa, Shin Ichi; Pons, M.

doi:10.1002/cvde.200606469

Cited by 57 publications

(73 citation statements)

References 20 publications

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“…The etching effect of hydrogen does have a significant influence on the growth rate profile, as shown by several authors [1,2,3]. Etching of the deposited layer will move some material further downstream, and thereby flatten out the deposition profile somewhat.…”

Section: Resultsmentioning

confidence: 92%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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Abstract. Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C 3 H 8 and CH 4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.

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Section: Resultsmentioning

confidence: 92%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

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“…It should be noted that the inlet conditions are not necessary the same as the condition just above the surface. Most importantly, the conditions at the inlet and on the surface might not be related via linear relationships 36 . Without knowing the actual surface condition, it is difficult to elucidate the underlying mechanism.…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

“…The reactions involving C-H and Si-H species, both experimental and theoretical data, are available in the literature 38,41,[44][45][46][47] and recently Cl-related reactions [48][49][50][51] have also become available based on ab initio and density functional theory (DFT) calculations. The data have been used extensively in CFD modeling 36,[51][52][53] . As the calculation cost is high, it is preferable to preselect only the important reactions rather than using the entire extensive set.…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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“…Through computational models the process can be studied in great detail, provided the models are good enough. Models implemented in the context of computational fluid dynamics (CFD) have successfully been used to simulate both gas-phase and surface chemistry for epitaxial growth of SiC by CVD [1,2,3]. However, these models have often been validated for one particular set of process parameters in one particular growth equipment.…”

Section: Introductionmentioning

confidence: 99%

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Danielsson

Kordina

Janzén

2014

MSF

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Abstract. Simulations of SiC chemical vapor deposition is an excellent tool for understanding, improving and optimizing this complex process. However, models used up to date have often been validated for one particular set of process parameters, often in the silicon limited growth regime, in one particular growth equipment. With chlorinated precursors optimal growth condition is often found to take place at the border between carbon limited and silicon limited regimes. At those conditions the previous models fail to predict deposition rates properly. In this study we argue that molecules like C 2 H 2 , C 2 H 4 and CH 4 , actually might react with the surface with much higher rates than suggested before. Comparisons are made between the previous model and our new model, as well as experiments. It is shown that higher reactivities of the hydrocarbon molecules will improve simulation results as compared to experimental findings, and help to better explain some of the trends for varying C/Si ratios.

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Growth and Doping Modeling of SiC‐CVD in a Horizontal Hot‐Wall Reactor

Cited by 57 publications

References 20 publications

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

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