Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

Cheng, Lin; Pan, Meng; Scofield, James D.; Steckl, A. J.

doi:10.1007/s11664-002-0083-x

Cited by 16 publications

(5 citation statements)

References 4 publications

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“…These values are near to 56 GPa that was reported for PECVD a-SiC film grown on Si substrates (Flannery, 1998 Table 2) and 117 GPa for SiCN film grown on Si (Sundaram, 2004). For CVD processes, the following Young's modulus was found: 426 ± 100 GPa for SiC grown on SiO 2 /Si by APCVD (Fleischman, 1998) and 426 GPa for SiC grown on Si 3 N 4 /Si by LPCVD (Cheng, 2002).…”

Section: Sic Film Deposition Processsupporting

confidence: 66%

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Fraga¹,

Pessoa²,

Massi³

et al. 2012

Physics and Technology of Silicon Carbide Devices

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The great development of thin film growth techniques has stimulated the industrial and academic researches about design, fabrication and test of thin film based devices. The replacement of the conventional bulk materials by thin films allows the fabrication of devices with smaller volume and weight, higher flexibility besides lower cost and good performance. It has been shown that the efficiency of thin film based devices is strongly dependent on their structural, electrical, mechanical and optical properties Fraga, a Fraga . At the same time that there is a trend in the miniaturization of electronic and electromechanical devices, there is also a considerable interest in the study of wide bandgap materials to replace the silicon as base material in these devices for harsh applications such as high temperatures and high levels of radiation Fraga, , Yeung, .Silicon carbide SiC has intrinsic properties that make it a material of great interest for microelectronic and MEMS Micro-Electro-Mechanical Systems applications. In the last years, there has been much debate in the literature about how the incorporation of dopant elements such as nitrogen, oxygen, aluminum, boron, phosphorus, etc. during the growth of SiC thin films by chemical vapor deposition CVD or physical vapor deposition PVD processes affects their properties. It has been noticed that the dopant incorporation allows controlling thin film properties such as optical bandgap and electrical conductivity, which are quite attractive because make possible to obtain semiconductor or insulator SiC-based films Alizadeh, Medeiros, . In general, the use of amorphous SiC films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology Hatalis, .Nowadays, SiC-based thin films, such as SiCN, SiCO, SiCNO, SiCB, SiCBN and SiCP, have been extensively used in electronic and MEMS devices either as a semiconductor or as an insulator, depending on the film composition. These films have been shown promising for applications in diodes, thin-film transistors TFTs and MEMS devices Yih, Patil, Hwang, Fraga, c .The goal of this chapter is to discuss the role of in situ incorporation of nitrogen, oxygen, aluminum, boron, phosphorus and argon on the properties of SiC films. Special attention is given to the low temperature SiC growth processes. An overview on the applications of SiCbased thin films in electronic and MEMS devices is presented and discussed. Our recent researches on heterojunction diodes and MEMS sensors are emphasized. . Dopant incorporation during growth of SiC thin films . . In situ dopingMost studies on SiC thin films, especially in their amorphous form, is not focused on intrinsic films. In general, the electrical properties of wide band gap semiconductor materials as the SiC are controlled by introducing dopants into the bulk material Oliveira, . Hence, determining the best material doping concentration is one important issue to be considered during a device development. SiC-based thin ...

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Section: Sic Film Deposition Processsupporting

confidence: 66%

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Fraga¹,

Pessoa²,

Massi³

et al. 2012

Physics and Technology of Silicon Carbide Devices

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“…Physics and Technology of Silicon Carbide Devices found: 426 ± 100 GPa for SiC grown on SiO 2 /Si by APCVD (Fleischman, 1998) and 426 GPa for SiC grown on Si 3 N 4 /Si by LPCVD (Cheng, 2002).…”

Section: Aluminum Incorporationmentioning

confidence: 99%

Physics and Technology of Silicon Carbide Devices

Hijikata¹

2012

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is an associate professor of electrical and electronics systems engineering in Saitama University, Saitama, Japan, where he has taught for 13 years. He was born in Tokyo on April 1971 and received his doctor degree of engineering in light-wave sensing technology from Tokyo Institute of Technology in 1999. After that he arrived at Saitama University as an assistant professor. He was previously in the national research institute (CNR) in Italy as a guest researcher from October 2005 to March 2006. He has been the current position since 2006. Dr. Hijikata has been interest in characterizations of surfaces and interfaces of SiC semiconductor material for its device applications, especially on characterizations and processing of MOS interfaces as well as on the oxidation mechanism of SiC.

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“…Binary group III nitrides [211] and SiC [212][213][214] have been deposited as polycrystalline thin films by pulsed laser deposition. Moreover, for SiC a wide variety of CVD methods are available [196,[215][216][217][218]. In particular plasma-assisted CVD [216] reduces the thermal budget of device processing [219] by achieving reasonable mechanical properties [220].…”

Section: Nanocrystalline Functional Layersmentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

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With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

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Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

Cited by 16 publications

References 4 publications

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Physics and Technology of Silicon Carbide Devices

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

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