Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

Wolf, K.; Stanzl, H.; Naumov, A.; Wägner, Hans; Kühn, W.; Hahn, B.; Gebhardt, W.

doi:10.1016/0022-0248(94)90843-5

Cited by 48 publications

(25 citation statements)

References 10 publications

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“…The analysis of Hall measurements demonstrates that free holes in nominally undoped ZnTe epilayers originate from an acceptor centre whose ionization energy E A varies between 94.7 meV and 118 meV, depending on the actual level of ionised impurity screening in the crystal. One may argue whether this acceptor could be identified with substitutional As on Te lattice site (As Te ), as it is found to diffuse into the epilayer from the underlying GaAs; however, the ionisation energy of As Te at infinite dilution in the ZnTe crystal is around 76.5 meV [22], i.e. well below the values in table 1.…”

Section: Electrical Properties Of Epilayersmentioning

confidence: 94%

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Paiano¹,

Prete²,

Lovergine³

et al. 2005

Cryst. Res. Technol.

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The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350°C using dimethylzinc (Me 2 Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micronsize hollow defects (with surface densities up to ∼10 6 cm -2) elongated in one of the 〈011〉 in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga 2 Te 3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p-ZnTe epilayers were prepared by tungsten evaporation and annealing at 350°C. The RT hole concentration in the epilayers varies almost linearly with Me 2 Zn molar flow between 2×10 15 cm -3 and 5×10 16 cm -3 . Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10 16 cm -3 range and slowly increasing with Me 2 Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C Te -D Zn ), the donor impurity being further identified as Ga diffusing from the substrate.

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Section: Electrical Properties Of Epilayersmentioning

confidence: 94%

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Paiano¹,

Prete²,

Lovergine³

et al. 2005

Cryst. Res. Technol.

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“…This material is promising for applications as a variety of optoelectronic devices such as pure green light emitting diodes, THz detectors, solar cells, wave-guides and modulators. For metalorganic vapour phase epitaxy (MOVPE), which is a promising growth technique for mass production, several efforts have been made to attain conductive p-type ZnTe using trimethylantimonide [1], tertiarybutylamine [2,3], trimethylbismuth [2], tetraethylbiarsine [4], trimethylarsine [5], triethylarsine [6] and tertiary-butylphosphine [2,3].…”

Section: Introductionmentioning

confidence: 99%

Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus

Hayashida

Tanaka

Nishio

et al. 2004

phys. stat. sol. (c)

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PACS 73.61. Ga, 78.55.Et, 81.15.Gh P-type doping of ZnTe has been investigated by metalorganic vapour phase epitaxy using tris-dimethylaminophosphorus as a dopant source. The photoluminescence and electrical properties of the layers have been clarified as a function of the dopant transport rate. For the layer grown at low dopant transport rate, e.g., 0.01 µmol/min, the spectrum is characterized by a free-to-bound transition emission related to phosphorus acceptor, although the spectrum is characterized by the donor-acceptor pair recombination emission for a relatively high dopant transport rate, e.g., 0.8 µmol/min. The carrier concentration of approximately 8 × 10 17 cm -3 is obtainable by using this dopant source.

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“…Among them are molecular beam epitaxy (MBE) [2][3][4][5], metalorganic vapour phase epitaxy (MOVPE) [6,7], RF magnetron sputtering [8], electrochemical etching [9]. Nevertheless, among these various technologies the Pulsed Laser Deposition (PLD) method is a highly flexible thin-film growth technique, which has been successfully applied to a wide range of materials [10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

Kotlyarchuk

Savchuk

2007

Physica Status Solidi (b)

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This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5 -5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 103 Ω cm at room temperature.

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Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

Cited by 48 publications

References 10 publications

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus

Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

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