2023
DOI: 10.1016/j.jpcs.2022.111103
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Growth and electrical properties of Yb3+ A-site doped PMNT:Yb single crystal

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Cited by 4 publications
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“…In addition, the aim of element doping is to have good thermal stability and high piezoelectric performance concurrently. The motivation for selecting Yb as the doping element is that (i) the ionic radius of Yb 3+ (0.87 Å) is very close to the ionic radius of Sm 3+ (0.96 Å) because the Sm 3+ -doped crystal showed record-high piezoelectric properties ( 27 ) and (ii) a quantitative analysis of a Yb doped for PIN-PMN-PT piezoelectric crystal has yet to be reported ( 37 , 38 ). The motivation for selecting Bi as the co-doped element is that Bi can prevent the decrease of T c ( 39 ).…”
Section: Resultsmentioning
confidence: 99%
“…In addition, the aim of element doping is to have good thermal stability and high piezoelectric performance concurrently. The motivation for selecting Yb as the doping element is that (i) the ionic radius of Yb 3+ (0.87 Å) is very close to the ionic radius of Sm 3+ (0.96 Å) because the Sm 3+ -doped crystal showed record-high piezoelectric properties ( 27 ) and (ii) a quantitative analysis of a Yb doped for PIN-PMN-PT piezoelectric crystal has yet to be reported ( 37 , 38 ). The motivation for selecting Bi as the co-doped element is that Bi can prevent the decrease of T c ( 39 ).…”
Section: Resultsmentioning
confidence: 99%