Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Sinha, Neeraj; Roul, Basanta; Mukundan, Shruti; Chandan, Greeshma; Mohan, L. R. Ram; Jali, V. M.; Krupanidhi, S. B.

doi:10.1016/j.materresbull.2014.10.059

Cited by 9 publications

(7 citation statements)

References 34 publications

(36 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…found to e 4 cm ¬1 indicating better crystalline quality of InGaN interlayer and also corroborates the HRXRD results. Therefore the growth of single phase InGaN Interlayer on the GaN layers possessed good crystalline quality when compared to literature reports [22,23]. In addition, the samples II and III also represents additional peaks corresponding to the defect induced phonon mode for InGaN/GaN based structures.…”

Section: Samplesmentioning

confidence: 56%

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

et al. 2019

View full text Add to dashboard Cite

InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using highresolution X-ray diffraction. The Indium composition and InGaN thickness were determined to be 10-15% and 5-10 nm respectively. Transmission electron microscopy image revealed the interfacial characteristics of InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN were determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5nm)/GaN structures.

show abstract

Section: Samplesmentioning

confidence: 56%

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The influence of such interface defects on the barrier height, and the ideality factor will be discussed in further sections. Figure 5(c) shows the room temperature PL spectra of sample E [57]. As we can see from the PL spectra, the emission peak at 2.48 eV corresponds to the free excitonic transition between valence and conduction bands of InGaN film.…”

Section: Polar Ingan/gan Heterostructuresmentioning

confidence: 92%

“…Figure 5(b) shows the XRC of the (0002) InGaN reflection of sample E [57], and the corresponding FWHM was found to be 390 arcsec, indicating the high quality of the as-grown InGaN film. This value is comparable to the values in literature [60,61].…”

Section: Polar Ingan/gan Heterostructuresmentioning

confidence: 98%

“…Followed by thermal cleaning, the InGaN films were grown in a single step. The indium composition was varied by changing the In/Ga flux ratio and substrate temperature, whereas the nitrogen plasma conditions were constant, flow rate~0.5 SCCM and forward RF power of 350 W. Figure 5(a) shows a 2θ-ω scan of as-grown InGaN films [57]. Well-resolved peaks corresponding to InGaN (0002) reflection was observed along with the GaN and Al 2 O 3 peaks in all the samples.…”

Section: Polar Ingan/gan Heterostructuresmentioning

confidence: 99%

See 1 more Smart Citation

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

Self Cite

View full text Add to dashboard Cite

III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.

show abstract

“…This leads to formation of 3D islands, resulting into high surface roughness along with inhomogeneous composition in the alloy 12,[18][19][20] . Moreover, at the typical temperatures for InGaN growth, the desorption rate of In is lower than the decomposition rate of In-N bonds, making the accumulation of In droplets on the substrate surface unavoidable 21,22 . The majority of InGaN ternary alloy are predicted to be thermodynamically unstable and show a tendency towards clustering and phase separation 23 .…”

Section: Introductionmentioning

confidence: 99%

Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

Cited by 9 publications

References 34 publications

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate

Contact Info

Product

Resources

About