Growth and Etching of Centimeter-Scale Self-Assembly Graphene–h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices

Abstract

The highly integrated miniature electronic and photonic components have been extensively studied because they exhibit a significant potential in producing scaled circuits with high performance. Inspired by the spontaneous organization of molecular units into ordered structures, we demonstrate for the first time a controllable fabrication of super-ordered graphene–hexagonal boron nitride (h-BN) planar heterostructure arrays on a liquid Cu surface by a chemical vapor deposition method. The area of graphene and h-BN arrays can reach up to 1 cm2 with a prominent uniformity in morphology and orientation. The size and density of the arrays can be precisely tailored by modulating the composition ratio of the CH4/H2. The electrostatic force among the heterostructure units and the fluidity of the liquid metal surface are accounted for the formation of the super-ordered arrays. Moreover, selective etching of h-BN in the heterostructure is also achieved, offering a direct top-down approach for the construction of ordered 2D patterns. The construction and etching of large-scale super-ordered 2D heterostructure arrays paves the way toward scaled integrated devices.

Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits

“…Meanwhile, by controlling the growth temperature, they also obtained in-plane WS 2 /MoS 2 heterostructures. Further, the realization of 2D vdWH arrays has been demonstrated by CVD. − For instance, by a laser cauterization approach to selectively seed the local defects that acting as nucleation sites, Li et al achieved a series of 2D metallic TMD/semiconducting TMD vdWH arrays (Figure e) . Through these two methods, various mixed-dimensional heterostructures can also be achieved. ,− For example, Li et al reported the fabrication of 1D/2D heterostructures composed of Bi 2 S 3 nanowire/MoS 2 monolayer via one-step CVD growth, as shown in Figure f.…”

Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures

“…The hBN encompassing the graphene can be seamlessly joined together to create a uniform and continuous film, effectively embedding the graphene within the hBN matrix. 51 We schematically viewed this process as shown in Fig. 4(a).…”

From Top to Down—Recent Advances in Etching of 2D Materials

“…It is found that etching initiated at the boundary of the heterojunction. [ 92 ] With the increase of time, the etching behavior occurred both in the boundary and h‐BN domain simultaneously (Figure 10e–g). Therefore, under the same etching conditions, B and N atoms in h‐BN are easier to generate gasification products than C atoms in graphene.…”