Growth and evaluation of epitaxial BaTiO₃thin films of less than 100 nm thickness by metal–organic chemical vapor deposition

Abstract

Epitaxial BaTiO3 (BTO) thin films of less than 100 nm thickness were grown on Pt(001)/MgO(001) substrates at growth temperatures of 500–700 °C with a low deposition rate of about 25 nm/h by metal–organic chemical vapor deposition (MOCVD). The BaTiO3 thin films were epitaxialy grown with (001) orientation. These films show quadrangular grains and a dense cross-sectional structure. The relative permittivities of these films grown at 500, 600, and 700 °C with thicknesses of 62, 65, and 82 nm were 338, 455, and 566 at 1 kHz, respectively. These relative permittivities were higher than those of BTO films prepared by other methods and BTO ceramics with thicknesses less than 100 nm.