Growth and Excellent Field Emission Properties of GaN Nanopencils and Nanotowers

Abstract

Gallium nitride (GaN) nanopencils and nanotowers have been synthesized by a chemical vapor deposition (CVD) method using the reaction of Ga2O3 and ammonia. The observed morphology of GaN nanopencils is divided into two parts: the bottom is a nanowire with large diameter; the top is a nanowire with small diameter. The observed morphology of GaN nanotowers is a layer structure. The formation mechanism of GaN nanopencils and nanotowers is a vapor-liquid-solid (VLS) mechanism. The turn on field of 2.6 V/µm is obtained for GaN nanopencils and the turn on field of 4.1 V/µm is obtained for GaN nanotowers, which are sufficient for field emission flat panel displays and cold electron sources in display devices. This growth of GaN nanopencils and nanotowers will facilitate flexible design of device architectures for nanoelectronics.

The effect of geometry parameters on light harvesting performance of GaN nanostructure arrays—a numerical investigation and simulation

“…Zhen C et al have synthesized GaN nanopencils and nanotowers and singlecrystalline bamboo shoot-shaped GaN nanowires and a layer-structure GaN nanowires by a chemical vapor deposition (CVD) method. In the work of Yeong Jae Kim et al they concluded that the saturation of photocurrent in the truncated nanocones was increased by about 3 times compared to planar GaN [6][7][8][9][10]. Li Zeping et al have found that GaN truncated nanocones have high absorption and photoelectrochemical efficiency compared with planar counterpart [11].…”