Growth and ferroelectric properties of highly c-oriented epitaxial Aurivillius BaBi4Ti4O15 thin films

Ahn, Yoonho; Son, Jong Yeog

doi:10.1016/j.mseb.2021.115046

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…A systematic rocking curve analysis (Figure S1) further corroborates this conjecture and also confirms that the BWO film with the highest crystallinity can be grown at Tsub = 600°C and 𝑃 = 125 mTorr. For this film, the full width at half maximum (FWHM) of the (006) peak is ~ 0.04°, an order of magnitude lower than previously reported values 11,12 .…”

Section: Resultscontrasting

confidence: 60%

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films

Jeong

Mun

Das

et al. 2021

ACS Appl. Electron. Mater.

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Aurivillius ferroelectric Bi2WO6 (BWO) encompasses a broad range of functionalities, including robust fatigue-free ferroelectricity, high photocatalytic activity, and ionic conductivity. Despite these promising characteristics, an in-depth study on the growth of BWO thin films and ferroelectric characterization, especially at the atomic scale, is still lacking. Here, we report pulsed laser deposition (PLD) of BWO thin films on (001) SrTiO3 substrates and characterization of ferroelectricity using the scanning transmission electron microscopy (STEM) and piezoresponse force microscopy (PFM) techniques. We show that the background oxygen gas pressure used during PLD growth mainly determines the phase stability of BWO films, whereas the influence of growth temperature is comparatively minor. Atomically resolved STEM study of a fully strained BWO film revealed collective in-plane polar offcentering displacement of W atoms. We estimated the spontaneous polarization value based on polar displacement mapping to be about 54 ± 4 μC cm −2 , which is in good agreement with the bulk polarization value. Furthermore, we found that pristine film is composed of type-I and type-II domains, with mutually orthogonal polar axes. Complementary PFM measurements further elucidated that the coexisting type-I and type-II domains formed a multidomain state that consisted of 90° domain walls (DWs) alongside multiple head-to-head and tail-to-tail 180° DWs. Application of an electrical bias led to in-plane 180° polarization switching and 90° polarization rotation, highlighting a unique aspect of domain switching, which is immune to substrate-induced strain.

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Section: Resultscontrasting

confidence: 60%

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films

Jeong

Mun

Das

et al. 2021

ACS Appl. Electron. Mater.

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Synthesis, thermal and magnetic properties of nanoceramics with a multilayer Aurivillius phase type

Lomanova,

Ugolkov,

Volkov

et al. 2024

Materials Science and Engineering: B

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Synthesis and characterization Fe doped BaBi4Ti4O15 prepared via molten salt method

Nurcahyaningtyas,

Prasetyo

2024

Electronic Physics Informatics International Conference (Epiic) 2023

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Growth and ferroelectric properties of highly c-oriented epitaxial Aurivillius BaBi4Ti4O15 thin films

Cited by 4 publications

References 29 publications

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films

Synthesis, thermal and magnetic properties of nanoceramics with a multilayer Aurivillius phase type

Synthesis and characterization Fe doped BaBi4Ti4O15 prepared via molten salt method

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Growth and ferroelectric properties of highly c-oriented epitaxial Aurivillius BaBi4Ti4O15 thin films

Cited by 4 publications

References 29 publications

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi2WO6 Thin Films

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi2WO6 Thin Films

Synthesis, thermal and magnetic properties of nanoceramics with a multilayer Aurivillius phase type

Synthesis and characterization Fe doped BaBi4Ti4O15 prepared via molten salt method

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Product

Resources

About

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films

Growth and Atomically Resolved Polarization Mapping of Ferroelectric Bi₂WO₆ Thin Films