Growth and investigation of thermoelectric properties of Bi–Sb alloy single crystals

Zemskov, V. S.; Belaya, A. D.; Beluy, U.S; Kozhemyakin, G. N.

doi:10.1016/s0022-0248(99)00587-4

Cited by 86 publications

(70 citation statements)

References 8 publications

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“…2,4,6,7 Currently, the best commercial TE materials near room temperature are still rhombohedral bismuth tellurides and related solid solutions fabricated by unidirectional crystal growth. [15][16][17] Nanostructuring strategies have been devised to prepare highperformance bismuth telluride-based alloys, including bottom-up and top-down approaches. In the bottom-up approach, nanostructures are first obtained by low-temperature hydrothermal synthesis, 2,5 ball milling 6,18,19 or melt spinning 4,20 and are subsequently sintered and consolidated by hot pressing (HP) or spark plasma sintering to yield bulk alloys.…”

Section: Introductionmentioning

confidence: 99%

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Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

et al. 2014

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The abundance of low-temperature waste heat produced by industry and automobile exhaust necessitates the development of power generation with thermoelectric (TE) materials. Commercially available bismuth telluride-based alloys are generally used near room temperature. Materials that are composed of p-type bismuth telluride, which are suitable for low-temperature power generation (near 380 K), were successfully obtained through Sb-alloying, which suppresses detrimental intrinsic conduction at elevated temperatures by increasing hole concentrations and material band gaps. Furthermore, hot deformation (HD)-induced multi-scale microstructures were successfully realized in the high-performance p-type TE materials. Enhanced textures and donor-like effects all contributed to improved electrical transport properties. Multiple phonon scattering centers, including local nanostructures induced by dynamic recrystallization and high-density lattice defects, significantly reduced the lattice thermal conductivity. These combined effects resulted in observable improvement of ZT over the entire temperature range, with all TE parameters measured along the in-plane direction. The maximum ZT of 1.3 for the hot-deformed Bi 0.3 Sb 1.7 Te 3 alloy was reached at 380 K, whereas the average ZT av of 1.18 was found in the range of 300-480 K, indicating potential for application in low-temperature TE power generation. Keywords: bismuth telluride; donor-like effect; hot deformation; low-temperature power generation; texture INTRODUCTION Thermoelectric (TE) devices have attracted extensive interest over the past few decades because of their potential use in direct thermal-toelectrical energy conversion and solid-state refrigeration. The TE conversion efficiency of a material can be gauged by the dimensionless figure of merit ZT ¼ a 2 sT/k, where a, s, k and T are the Seebeck coefficient, the electrical conductivity, the thermal conductivity and the operating temperature, respectively. 1 Continuous effort has been invested toward improving the ZT values of TE materials, resulting in significant advances through phonon engineering 2-9 and band engineering. [10][11][12][13][14] For example, remarkable increases in ZT have been achieved in bulk nanomaterials via the enhancement of phonon scattering at boundaries to reduce lattice thermal conductivities. 2,4,6,7 Currently, the best commercial TE materials near room temperature are still rhombohedral bismuth tellurides and related solid solutions fabricated by unidirectional crystal growth. [15][16][17] Nanostructuring strategies have been devised to prepare highperformance bismuth telluride-based alloys, including bottom-up

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

et al. 2014

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“…For the low-temperature environment, bismuthantimony (Bi-Sb) alloy is one of the most promising thermoelectric materials with highly efficient energy conversion in the temperature range less than 200 K [1][2][3][4][5][6][7]. Generally, the thermoelectric performance of materials is evaluated by the dimensionless figure of merit, ZT = (S 2 s/k)T, where S is the Seebeck coefficient, s is the electric conductivity, and k is the thermal conductivity [8].…”

Section: Introductionmentioning

confidence: 99%

“…91Sb0.09 and Bi0. 85Sb0.15 [1]. In addition, the development of Bi-Sb alloy-based composite materials have been an important target to add a merit of mechanical point to the unique thermoelectric performance at low temperature.…”

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First-principles simulation on thermoelectric properties in Bi-Sb System

El-Asfoury

Nakamura

Abdelmoneim

2017

J. Phys.: Conf. Ser.

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Abstract. Thermoelectric properties of bismuth-antimony (Bi-Sb) alloy system were simulated on the basis of first-principles calculation, to discuss the potential for thermoelectric devices. Atomistic model structures of Bi-Sb alloy system were devised in the forms of single-crystal bulk and one-dimensional nanowire under the periodic boundary condition. The cell parameters of the bulk model were simulated with respect to temperature by the quasiharmonic approximation through phonon calculation, and dependences of the Seebeck coefficient on composition, surface condition, and temperature have been demonstrated by using our original methodology in terms of the electronic state of Bi-Sb alloy system. For the single-crystal bulk Bi-Sb models, a meaningful effect of the composition on the Seebeck coefficient has not been observed, whereas a clear difference in phonon dispersion was confirmed between pure Bi and Sb-substituted Bi, leading to the significant difference in thermal conductivity. We clarified that the surface condition is a key point to control the Seebeck coefficient for the nanowire form. IntroductionApplication of thermoelectric devices is spreading over a variety of special environments and conditions in power generation and refrigeration. For the low-temperature environment, bismuthantimony (Bi-Sb) alloy is one of the most promising thermoelectric materials with highly efficient energy conversion in the temperature range less than 200 K [1][2][3][4][5][6][7]. Generally, the thermoelectric performance of materials is evaluated by the dimensionless figure of merit, ZT = (S 2 s/k)T, where S is the Seebeck coefficient, s is the electric conductivity, and k is the thermal conductivity [8]. Even at low temperature T, the dimensionless ZT for some appropriate Bi-Sb alloy systems comes up to an efficient value; for example, ZT = 0.6 has been reported for the single-crystal Bi1-xSbx alloy with the compositions of Bi0. 91Sb0.09 and Bi0. 85Sb0.15 [1]. In addition, the development of Bi-Sb alloy-based composite materials have been an important target to add a merit of mechanical point to the unique thermoelectric performance at low temperature. We have succeeded in fabricating a novel composite material based on Bi0. 85Sb0.15 and graphene with good thermoelectric performance [2].To enhance energy conversion efficiency, it is well known that the miniaturization of thermoelectric materials to low dimension at nanoscale is effective technique [3,[9][10][11][12][13]. Rabina et al. has simulated ZT of Bi1-xSbx nanowire numerically based on the conventional procedures [3]. We have

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“…[5][6][7] The unidirectionally solidified ingots exhibit the best thermoelectric performance along the crystal growth direction (the direction perpendicular to the C axis); however, they have a disadvantage of poor mechanical properties because of the coarse grain size and weak bonding of Van der Waal interactions between Te ð1Þ -Te ð1Þ layers. In recent years, many powder metallurgical methods such as cold pressing, hot pressing and hot extrusion have been applied to fabricate bulk polycrystalline materials for applications especially in miniature thermoelectric modules.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Properties of p-Type (Bi2Te3)x(Sb2Te3)1−x Thermoelectric Materials

et al. 2005

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P-type (Bi 2 Te 3 ) x (Sb 2 Te 3 ) 1Àx thermoelectric materials with various chemical compositions (x ¼ 0:16, 0.20 and 0.24) were fabricated through the zone melting (ZM) method and spark plasma sintering (SPS) technique. The dimensionless figure of merit (ZT ¼ 2 T=) of the zone-melted crystals increased with increasing the Bi 2 Te 3 content (x). Compared to those of the zone-melted crystals with the same chemical composition, further enhancement by 108-115% in the ZT values was obtained through a combination of ZM and SPS techniques. As a result, the optimal figure of merit reached 1.22 at about 350 K for the composition of 24%Bi 2 Te 3 -76%Sb 2 Te 3 with 3 mass% excess Te. The bending strength of the sintered materials was about 65 MPa, which was 5-7 times higher than that of the zone-melted crystals.

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Growth and investigation of thermoelectric properties of Bi–Sb alloy single crystals

Cited by 86 publications

References 8 publications

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

First-principles simulation on thermoelectric properties in Bi-Sb System

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials

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Growth and investigation of thermoelectric properties of Bi–Sb alloy single crystals

Cited by 86 publications

References 8 publications

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction

First-principles simulation on thermoelectric properties in Bi-Sb System

Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1&minus;<I>x</I></SUB> Thermoelectric Materials

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Preparation and Properties of p-Type (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<I><SUB>x</SUB></I>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>1−<I>x</I></SUB> Thermoelectric Materials