Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(1 1 1)B

Islam, Md. Earul; Akabori, Masashi

doi:10.1016/j.jcrysgro.2017.02.009

Cited by 9 publications

(5 citation statements)

References 17 publications

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“…For the double heterostructure V/III-2, V/III-10 and V/III-20 samples, the roughness was found to be 13 nm, 3 nm, and 6 nm respectively. In our previous study 19) of MnAs/InAs/GaAs(111)B structure, where InAs was grown at ∼480 °C, the surface roughness was ∼0.9 nm. But in this experiment, the surface roughness is dominated by LT InAs, causing rougher surface morphology.…”

Section: Surface Morphology By Afmmentioning

confidence: 97%

“…Additionally, the degradation of physical properties by the dislocations becomes weaker by networking the dislocations than on (001), which leads to better electrical properties of InAs. 18) In order for spin-FET application, we have developed FM/ SC hybrid structures using FM MnAs and semiconducting thick InAs on GaAs(111)B grown by MBE, 19) which have shown some promising results in case of in-plane device applications. 20,21) But, in case of in-plane devices, there is a limitation of shrinking channel length due to lithography technique.…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Islam,

Kabir,

Akabori

2024

Jpn. J. Appl. Phys.

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MBE was utilised to produce a low-temperature double-heterostructure of MnAs/InAs/MnAs on GaAs(111)B for vertical spin field effect transistor (VSFET). Due to the difficulty of developing InAs at low temperatures, we created a single InAs thick layer (~1.2 μm) at 250oC with varying V/III ratio (As/In = 2, 10, 20) to validate the appropriate development environment. Their structural and electrical characteristics were best at V/III ratio 10. Then, varying the As/In beam equivalent pressure (BEP) ratio, we created the double heterostructure at low temperature (~250oC). AFM showed InAs V/III ratio-related surface roughness fluctuation. SEM and EDS cross-sectional investigation showed three layers of MnAs and InAs. We discovered in-plane easy magnetization and the influence of top and bottom MnAs layers on the hysteresis curve using a superconducting quantum interference device (SQUID) magnetometer. MnAs layers were ferromagnetic at room temperature MH measurements. MnAs/InAs/MnAs on GaAs(111)B has potential as a structure for spin-FETs.

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Section: Surface Morphology By Afmmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Islam,

Kabir,

Akabori

2024

Jpn. J. Appl. Phys.

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“…Sample growth and characterization are reported in Refs. [23,24]. Sample MnAs-111 shows an isotropic magnetic behavior in plane and a hard magnetic axis along [0001].…”

Section: Samples and Experimentsmentioning

confidence: 99%

Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature

Helman

Camjayi²,

Islam

et al. 2021

Phys. Rev. B

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We present an experimental and theoretical study of the anomalous Hall effect (AHE) in MnAs epilayers grown over GaAs, with the aim to identify the intrinsic contribution to the AHE, which can be accurately evaluated using ab initio electronic structure calculations. Our magnetotransport measurements show a quadratic behavior of the Hall resistivity with longitudinal resistivity, characteristic of scattering-independent processes, thus enabling the comparison with our ab initio calculations. The calculated Berry phase contribution to the AHE is in quantitative agreement with the measured AHE in these epilayers. Moreover, the predicted anisotropic dependence of the experimental AHE on the magnetization is well reproduced.

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“…28 In magnetization measurement, the as-grown sample shows ∼1.5 times higher magnetization and ∼2.0 times higher coercive field at 4 K than those at 300 K, which is reasonable if we simply think about temperature effect on magnetization. 27 Using the hybrid system, we fabricated lateral spin valve devices by electron-beam lithography (EBL), Ar + etching, evaporation, and lift-off processes. Ferromagnetic (FM) electrodes fabricated from the top MnAs layer were 0.5 and 3 μm in length and 40 μm in width (W) for creating different switching magnetic fields to observe spin valve phenomenon, and the InAs channel length (L) between FM electrodes was varied from 1 to 3 μm and the channel width (W) was the same as that of the FM electrode width.…”

Section: Article Scitationorg/journal/advmentioning

confidence: 99%

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

2019

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We successfully confirmed spin injection and detection in the MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral nonlocal spin valve (NLSV) measurement at 1.5 K and 77 K. Surprisingly, we found larger NLSV signals at 77 K than that at 1.5 K. This seems to be interesting behavior compared to typical temperature dependent spin injection and detection study. We studied in depth the NLSV signals to extract spin parameters such as spin diffusion length and spin injection efficiency in the hybrid system. We found spin diffusion length to be ∼10 μm and ∼7 μm at 1.5 K and 77 K, respectively, and also found spin injection efficiency to be ∼1.6% and ∼2.5% at 1.5 K and 77 K, respectively. The reason behind higher injection efficiency at 77 K comes from better impedance matching between MnAs and InAs at 77 K than that at 1.5 K due to large temperature variation of MnAs resistivity.

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Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(1 1 1)B

Cited by 9 publications

References 17 publications

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy

Anomalous Hall effect in MnAs: Intrinsic contribution due to Berry curvature

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

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