Growth and magnetization study of transition metal doped GaN nanostructures

Abstract

This work presents the MOCVD growth and characterization of optically active GaN nanostructures which have been doped with the transition metals manganese and iron for potential spintronic applications. Introduction of both these transition metals in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. Both Ga1–xMnxN and Ga1–xFexN nanostructures showed hysteresis behaviour at 5 K. Further VSM measurements on Ga1–xFexN nanostructures at 300 K showed a hysteresis curve with a reduced coercive filed and displayed superparamagnetic behaviour. These magnetically active nanostructures are promising and provide an incentive to further study them with the aim of eventually utilizing them in spintronic applications and improving device efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

σ- vs π-Bonding in Manganese(II) Allyl Complexes

“…In the manganese complex, the metal is η 1 -bonded to one indenyl ligand and η 3 -bonded to another, whereas in the magnesium species, the indenyl ligands are identically bonded in an unusual η 1 /η 3 -bonding mode involving a weak interaction with the bridgehead carbon. Both Cp 2 Mn and Cp 2 Mg have been used in CVD processes to dope semiconductors.…”

ScAlN nanowires: A cathodoluminescence study

“…Though we are unable to explain the exact nature of the emission, we can relate it to the presence of Sc atoms in the AlN matrix. This modification of the AlN electronic structure by Sc opens up new possibilities for creating AlN-based electronics, especially when one compares it to the impact transition metal doping had on GaN research, which gave rise to ferromagnetic semiconductors and spintronic applications [3][4][5]. Apart from this, the alloying of ScN and AlN is interesting as it could be used to tailor novel multifunctional materials with a wide range of optoelectronic applications, especially considering ScAlN alloys could present an alternative to InAlN in the UV to visible red range of the spectrum.…”

“…Such a material possesses great potential for spintronic applications [3][4][5]. Similarly, the combination of GaN and scandium nitride (ScN) has attracted special attention, either as a lattice matched substrate [6], as a buffer layer for the growth of defect-free GaN islands [7], or as an alloy [8,9].…”