2023
DOI: 10.1002/pssb.202200492
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Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template

Abstract: Semipolar {} AlInN layers with thicknesses of ≈0.4 μm are grown on a fully relaxed semipolar Ga0.9In0.1N/GaN/m‐plane sapphire template by metalorganic chemical vapor deposition. The grown AlInN layers are confirmed to have relatively flat surfaces of less than 1.5 nm in root mean square roughness and high InN mole fractions ranging from 0.306 to 0.444, which are close to alloy compositions lattice matched to the underlying semipolar {} Ga0.9In0.1N layer. The microstructure analyses reveal that the AlInN layers… Show more

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