Growth and microstructure of heterogeneous crystal GaSe:InS

Atuchin, Victor V.; Beisel, Nina F.; Кох, К. А.; Кручинин, В. Н.; Корольков, И. В.; Pokrovsky, L.D.; Tsygankova, Alphiya R.; Kokh, A. E.

doi:10.1039/c2ce26474a

Cited by 19 publications

(13 citation statements)

References 34 publications

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“…Due to interesting semiconductor properties, GaSe is used in microelectronic and epitaxial technologies (Emery et al ., ; Rudolph et al ., ; Ho et al ., ; Huang et al ., ; Late et al ., ). The pronounced layered crystal structure of GaSe, space group P

\bar{6} m 2

, where dense atomic layers are linked by relatively weak van der Waals forces, defines many specific physical and chemical properties of GaSe, such as high anisotropy of mechanical, thermal, linear and nonlinear optical parameters, higher doping and intercalation ability (Cenzual et al ., ; Fernelius, ; Singh et al ., ; Abdullaev et al ., ; Andreev et al ., ; Feng et al ., ; Abdinov et al ., ; Sarkisov et al ., ; Zhang et al ., ; Isik & Gasanly, ; Atuchin et al ., ,b ; Kato et al .,). The weak interlayer chemical bonds in the GaSe structure results in low mechanical properties and high GaSe crystal cleavage.…”

Section: Introductionmentioning

confidence: 98%

Defects in GaSe grown by Bridgman method

Кох

Atuchin

Гаврилова

et al. 2014

Journal of Microscopy

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Optical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects. The hillock-type formations are round-shaped with a bottom diameter of ∼200 nm and a height of ∼20-35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements.

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\bar{6} m 2

Section: Introductionmentioning

confidence: 98%

Defects in GaSe grown by Bridgman method

Кох

Atuchin

Гаврилова

et al. 2014

Journal of Microscopy

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“…As a result, a set of GaSe crystals with sub-orthogonal orientation of the cleavage plane to the growth axis was obtained [34][35][36] .…”

Section: Crystal Growth and Sample Fabricationmentioning

confidence: 99%

“…Doping with InSe or GaS is found to be similar to In or S doping, respectively, or the growth of ternary solid solution crystals Ga 12x In x Se x or GaSe 12x S x ; somewhat better dopant distributions were established for the case of doping with InSe or GaS. Doping with InS is equivalent to two-element doping or the growth of quaternary solid solution Ga 12y In y Se 12x S x crystals, which resulted in approximately 12% higher In solubility for GaSe:InSe (5 mass.%) 34 . Doped crystals were also grown from the melt of GaSe and other structure ternary compounds: GaSe:AgGaSe 2 26,44,73 and GaSe:AgGaS 2…”

Section: Doped Gase For Frequency Conversion J Guo Et Almentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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“…The crystal growth technique used in this work was the vertical Bridgman– Stockbarger method as described in our previous papers and other works [22], [24], [29], [31], [32], [33]. Elementary copper (Cu), gallium (Ga) and selenium (Se) were used as starting materials.…”

Section: Methodsmentioning

confidence: 99%

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Mobarak

Ashari

Nassary

et al. 2018

Heliyon

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Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis, respectively. The Hall effect and the electrical conductivity were determined in terms of temperature, parallel and orthogonal to the layer surface, and the parameters proved to be strongly anisotropic. From carried out measurements, different parameters such like the carrier mobilities, the carrier concentration, the relaxation time, the diffusion coefficient, and the length of diffusion for both, majority carriers and minority carriers were estimated.

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Growth and microstructure of heterogeneous crystal GaSe:InS

Cited by 19 publications

References 34 publications

Defects in GaSe grown by Bridgman method

Defects in GaSe grown by Bridgman method

Doped GaSe crystals for laser frequency conversion

Growth and anisotropy of transport properties of CuGaSe2 single crystals

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