Growth and microstructure of self-assembled ErAs islands in GaAs

Kadow, C.; Johnson, J. A.; Kolstad, K.; Ibbetson, J. P.; Gossard, A. C.

doi:10.1116/1.1306299

Cited by 46 publications

(41 citation statements)

References 11 publications

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“…As the deposition is increased to 0.5 ML, the density of particles increases to about 2.2ϫ10 11 cm Ϫ2 , with the average particle area increasing to 120 nm 2 . By increasing the deposition to 1 ML the particle density is reduced to about 1.5ϫ10 11 cm Ϫ2 while the average particle area increases to 300 nm 2 . The height of the islands remained relatively constant between 10 and 16 Å ͑or about 4 ML͒ for these depositions.…”

Section: 13mentioning

confidence: 99%

“…10 In this letter we examine the growth regime prior to the formation of a complete film. In this regime the ErSb spontaneously forms nanometer-sized particles similar to ErAs on GaAs 11 and InGaAs. 6 We grow and study the properties of composite materials consisting of layers of self-assembled ErSb semimetallic particles within a GaSb matrix.…”

Section: Metalõsemiconductor Superlattices Containing Semimetallic Ermentioning

confidence: 99%

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Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

Hanson

Driscoll

Kadow

et al. 2004

Applied Physics Letters

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We demonstrate the growth by molecular beam epitaxy of a metal/semiconductor composite consisting of epitaxial semimetallic ErSb particles in a GaSb matrix. The ErSb nucleates in an island growth mode leading to the spontaneous formation of nanometer-sized particles. These particles are found to preferentially grow along a [011] direction on a (100) GaSb surface. The particles can be overgrown with GaSb to form an epitaxial superlattice consisting of ErSb particles between GaSb spacer layers. The size of the ErSb particles increases monotonically with the deposition. The carrier concentrations in the superlattices are found to be dependent on both the size and density of the ErSb particles. Smaller particles and closer layer spacings reduce the hole concentration in the film.

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Section: 13mentioning

confidence: 99%

Section: Metalõsemiconductor Superlattices Containing Semimetallic Ermentioning

confidence: 99%

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

Hanson

Driscoll

Kadow

et al. 2004

Applied Physics Letters

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“…Constraining to a thickness of less than 1.8 monolayers of ErAs allows for high quality material growth. 70 The ErAs layer forms elongated islands and provides a quasimetallic behavior leading to excellent recombination performance. Photogenerated carriers can be efficiently captured in adjacent ErAs layers.…”

Section: Novel Materials For Photoconductorsmentioning

confidence: 99%

“…However, deposition of 1-2 ErAs monolayers 82 allows for ErAs island formation with quasimetallic properties and epitaxial overgrowth of the islands by high quality InGaAs material. 70 To allow for an efficient capture process of photogenerated carriers, an ErAs:InGaAs superlattice as in the ErAs:GaAs system is used. Short periods allow for short recombination times in the range of 300 fs as reported for a period of 5 nm.…”

Section: Novel Materials For Photoconductorsmentioning

confidence: 99%

Tunable, continuous-wave Terahertz photomixer sources and applications

Preu

Döhler

Malzer

et al. 2011

Journal of Applied Physics

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432

293

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Realization of gigahertz-frequency impedance matching circuits for nano-scale devices Appl. Phys. Lett. 101, 053108 (2012) Synchronization of a renewable energy inverter with the grid J. Renewable Sustainable Energy 4, 043103 (2012) Monolithic high-temperature superconducting heterodyne Josephson frequency down-converter Appl. Phys. Lett. 100, 262604 (2012) Generation of pure phase and amplitude-modulated signals at microwave frequencies Rev. Sci. Instrum. 83, 064705 (2012) Additional information on J. Appl. Phys. This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies $ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC rolloff, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode-based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 Â 10 À3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

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“…53,54 The growth rate of the RE-As 42 and the amount deposited 21,[55][56][57] affect the density 096106-3 Salas et al…”

mentioning

confidence: 99%

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

et al. 2017

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Growth and microstructure of self-assembled ErAs islands in GaAs

Cited by 46 publications

References 11 publications

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb

Tunable, continuous-wave Terahertz photomixer sources and applications

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

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