Growth and modulation of silicon carbide nanowires

Choi, Heon Jin; Seong, Han Kyu; Lee, Jungchul; Sung, Yun Mo

doi:10.1016/j.jcrysgro.2004.05.094

Cited by 86 publications

(56 citation statements)

References 21 publications

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“…22 The SiC NWs are grown by a Ni-catalyzed CVD process similar to that previously reported. 23 Another method consists in using stainless steel substrates with 50 nm gold layers deposited on top, and put them inside a quartz tube in a tube furnace. 5 First, the substrates underwent a pre-growth step at 485°C for 30 min to break the gold film into nanoparticles.…”

Section: Sinws Electrochemical Characterizationsmentioning

confidence: 99%

Highly N-doped Silicon Nanowires as a Possible Alternative to Carbon for On-chip Electrochemical Capacitors

et al. 2013

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Highly n-doped silicon nanowires (SiNWs) have been grown by a chemical vapor deposition process and have been investigated as possible electrodes for electrochemical capacitors (ECs) micro-devices. Their performances have been compared to existing literature on the field, which shows the use of SiNWs fabricated via different techniques, SiC coated SiNWs and porous silicon layers. The double layer capacitance of n-doped silicon wafer is ≈6 µF cm −2 in standard organic electrolyte, and this value can be increased by nanostructuration of SiNWs up to 440 µF cm −2 by tuning deposition parameters. Similar values are found in the literature. Symmetrical microdevices based on two identical SiNWs electrodes can be operated in organic based electrolytes within a 1.2 V voltage window. The devices show excellent cycling efficiency over more than 2000 cycles, with capacitance value of 51 µF cm −2 and an energy density of 10 nWh cm −2 (37 µJ cm). The increase of specific surface area by different techniques may drastically boost these values in the near future.

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Section: Sinws Electrochemical Characterizationsmentioning

confidence: 99%

Highly N-doped Silicon Nanowires as a Possible Alternative to Carbon for On-chip Electrochemical Capacitors

et al. 2013

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“…A typical VLS-based NW growth configuration at 950ºC in an horizontal hotwall CVD furnace has been applied by Seong et al [6,31] to fabricate SiC NWs with ~100 nm of diameter and several μm of length for subsequent NWFET fabrication. Thermally oxidized Si wafers with a 2 nm layer of Ni, deposited by sputtering, were used as initial substrates.…”

Section: C-sic Nw Growth Based On Vapor-liquid-solid (Vls) Mechanismmentioning

confidence: 99%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

185

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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“…Core-shell SiC NW have also been synthesized from carbon monoxide using Ni catalyst by carbothermal reduction method (Attolini et al, 2008). Pure 3C-SiC NW, without shell and free from impurities with the exception of those related to the catalyst at the tip, have been prepared as follows: 3C-SiC NW were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) by using Ni, Au, Fe as catalysts and dichloromethylvinylsilane or methyltrichrolosilane as precursors (Kang et al, 2004;Takai et al, 2007;Yang et al, 2004;Seong et at. 2004).…”

Section: A Brief Review Of Nw Growth Methodsmentioning

confidence: 99%