Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Zhu, Yuxia; Xiu, Xiangqian; Cheng, Fei; Li, Yuewen; Xie, Zili; Tao, Tao; Chen, Peng; Liu, Bin; Zhang, Rong; Zheng, Yi

doi:10.1007/s10971-021-05629-4

Cited by 18 publications

(9 citation statements)

References 45 publications

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“…The various precursors used to synthesize Ga 2 O 3 nanomaterials were gallium acethylacetonate [ 12 ], gallium isopropoxide [ 179 , 180 , 181 , 182 , 183 ], Gallium(III) chloride aqueous solution [ 180 ], Ga metal [ 184 , 185 ] and gallium nitrate hydrate [ 14 , 15 , 186 , 187 , 188 , 189 , 190 , 191 ]. G. Sinha et al [ 192 ] prepared the pure Ga 2 O 3 nanocrystalline thin film on quartz substrate for the first time by the sol-gel method and analyzed the effect of annealing temperature on phase variation of the deposited film.…”

Section: Ga 2 O 3 Materials And...mentioning

confidence: 99%

“…Y. Zhu et al [ 191 ] successfully synthesized the β-Ga 2 O 3 thin films on (0001) sapphire substrate by a simple and effective sol-gel spin coating method. The SEM images of β-Ga 2 O 3 films synthesized with pre-heating temperatures of 100 °C and 200 °C had surface cracks, while the 300–500 °C pre-heated films were crack-free and very flat.…”

Section: Ga 2 O 3 Materials And...mentioning

confidence: 99%

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A Review on Gallium Oxide Materials from Solution Processes

et al. 2022

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Gallium oxide (Ga2O3) materials can be fabricated via various methods or processes. It is often mentioned that it possesses different polymorphs (α-, β-, γ-, δ- and ε-Ga2O3) and excellent physical and chemical properties. The basic properties, crystalline structure, band gap, density of states, and other properties of Ga2O3 will be discussed in this article. This article extensively discusses synthesis of pure Ga2O3, co-doped Ga2O3 and Ga2O3-metal oxide composite and Ga2O3/metal oxide heterostructure nanomaterials via solution-based methods mainly sol-gel, hydrothermal, chemical bath methods, solvothermal, forced hydrolysis, reflux condensation, and electrochemical deposition methods. The influence of the type of precursor solution and the synthesis conditions on the morphology, size, and properties of final products is thoroughly described. Furthermore, the applications of Ga2O3 will be introduced and discussed from these solution processes, such as deep ultraviolet photodetector, gas sensors, pH sensors, photocatalytic and photodegradation, and other applications. In addition, research progress and future outlook are identified.

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Section: Ga 2 O 3 Materials And...mentioning

confidence: 99%

Section: Ga 2 O 3 Materials And...mentioning

confidence: 99%

A Review on Gallium Oxide Materials from Solution Processes

et al. 2022

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“…The epitaxial growth of Ga 2 O 3 thin films is important for the realization of high-performance devices and understanding their intrinsic properties. Thus far, many growth techniques have been reported for the epitaxial growth of Ga 2 O 3 thin films, including pulsed laser deposition (PLD), , molecular beam epitaxy, metal–organic chemical vapor deposition (CVD), mist-CVD, sol–gel, and sputtering . For high-power devices, homoepitaxial Ga 2 O 3 structures, wherein both the film and substrate are β-Ga 2 O 3 , are desirable because a key feature of high-power electronics is a high resistance to electrical breakdown under high voltage conditions.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

et al. 2022

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We report the epitaxial growth of (2̅01)-oriented β-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

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“…[ 1 ] Inspired by their work, some other materials were also developed based on spin coating. [ 2,3 ] The authors also proposed that this technique can be used to produce functional single crystalline inorganic materials such as semiconductors by further depositing semiconductors on top of the spin‐coated films. [ 1 ] One of the great promises of this proposal is that after the semiconductor depositions, the intermediate sacrificial layer can be removed, and the semiconductor layer can be transferred to another host substrate enabling parent wafer reuse.…”

Section: Introductionmentioning

confidence: 99%

From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells

Sharma

Favela

et al. 2022

Adv Materials Inter

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This paper presents work on the heteroepitaxy of salts, specifically fluorides, on semiconductors and heteroepitaxy of semiconductors on salts. Fluorides layers are deposited on commercial Gallium Arsenide (GaAs) wafers followed by the heteroepitaxial growth of GaAs using metal‐organic chemical vapor deposition (MOCVD). The fluoride layers consist of 2 lattice‐engineered layers of alkaline‐earth compounds to match with GaAs, and are used to sandwich another alkaline‐earth compound with higher water‐solubility as a sacrificial layer. The triple fluoride layers enable liftoff of free‐standing semiconductor films which can be further transferred to desirable substrates. 2D‐X‐ray Diffraction (2D‐XRD) measurements confirm epitaxial growth of both the fluorides and the subsequently grown GaAs films. Single junction (SJ) solar cell devices based on thus prepared films show a power conversion efficiency (PCE) of 10.3% under 1 sun illumination. After the completion of device fabrications, the GaAs film is lifted off from the substrate by a novel water‐assisted epitaxial liftoff (H2O‐ELO) technique and transferred to a cheaper substrate. The original GaAs wafer is recycled and reused twice. Devices based on reused substrates show no significant degradation in performance. The semiconductor‐salt‐semiconductor scheme has great implications in high‐performance, flexible, and large‐area electronics.

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Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Cited by 18 publications

References 45 publications

A Review on Gallium Oxide Materials from Solution Processes

A Review on Gallium Oxide Materials from Solution Processes

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells

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Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Cited by 18 publications

References 45 publications

A Review on Gallium Oxide Materials from Solution Processes

A Review on Gallium Oxide Materials from Solution Processes

Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer

From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells

Contact Info

Product

Resources

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Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer