Growth and optical properties of GaN/AlN quantum wells

Adelmann, Christoph; Sarigiannidou, E.; Jalabert, D.; Hori, Yuichi; Rouvière, J. L.; Daudin, B.; Fanget, S.; Bru‐Chevallier, C.; Shibata, Tomohiko; Tanaka, Masatoshi

doi:10.1063/1.1581386

Cited by 80 publications

(50 citation statements)

References 24 publications

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“…4 The latter adverse effect has lead to the conclusion that for optimal optical devices ͑such as QW lasers͒, the maximum well thickness should be around 3 nm ͑12 DL GaN͒. 13,14 Note that in Ref. 14, the large linewidth broadening indicated severe thickness fluctuations and interface roughness, which may contribute to a prevalence of nonradiative recombination.…”

Section: Resultsmentioning

confidence: 99%

“…Compared with using ͑Ga,Al͒N, using pure AlN as the barrier material leads to a stronger macroscopic polarization ͑both spontaneous and piezoelectric͒ and larger built-in electric fields. 2,13 This offers a wider range of effective band-gap ͑optical emission͒ tunability of both interband transitions 14 and improved intersubband transitions. [15][16][17] In particular, earlier experimental results for using ͑Ga,Al͒N as a barrier have shown that the band gap is set primarily by the thickness of the well layer, 16 as well as by the barrier width.…”

Section: Introductionmentioning

confidence: 99%

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Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

et al. 2010

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Based on all-electron density-functional theory calculations using the generalized gradient approximation, we demonstrate the continuous tunability of the band gap and strength of the built-in electric field in GaN/AlN ͑0001͒ superlattices by control of the thickness of both the well ͑GaN͒ and barrier ͑AlN͒ regions. The effects of strain for these quantities are also studied. Calculations taking into account the self-interaction correction exhibit the same dependence on thickness. The calculated electric field strength values are in good agreement with recent experiments. Spontaneous polarization dominates the contribution to the electric field and the strain-induced piezoelectric polarization is estimated to contribute only about 5-10%.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

et al. 2010

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“…The AlN/GaN heterostructures are also of paramount importance for applications such as high electron mobility transistors (HEMTs), ultraviolet (UV) emitters and sensors, as well as optoelectronic devices based on the intersubband principle (e.g. [5][6][7][8][9][10][11][12][13]). …”

Section: Introductionmentioning

confidence: 99%

Strain accommodation and interfacial structure of AlN interlayers in GaN

Dimitrakopulos

Kalesaki

Komninou³

et al. 2009

Cryst. Res. Technol.

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The strain accommodation mechanisms at AlN interlayers in GaN, grown by radio‐frequency plasma assisted molecular beam epitaxy, are studied using transmission electron microscopy techniques and atomistic modelling. Interlayers of various thicknesses grown within GaN epilayers deposited on both sapphire and silicon substrates have been employed. Interlayers of thickness below 6 nm do not exhibit line defects although local roughness of the upper interlayer interface is observed as a result of the Al adatom kinetics and higher interfacial energy compared to the lower interface. Above 6 nm, introduction of a‐type misfit and threading dislocations constitutes the principal relaxation mechanism. Due to strain partitioning between AlN and GaN, threading dislocations adopt inclined zig‐zag lines thus contributing to the relief of alternating compressive‐tensile elastic strain across the AlN/GaN heterostructure. The observed dislocation configurations are consistent with a model of independent motion by climb or ancillary glide in response to their localized three‐dimensional strain environment. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…SLs with the same amount of dopants either in the barrier-or well-are grown and no significant structural differences were observed by XRD or AFM. In order to study the effect of doping on ISB absorption and assess the SL quality grown by our technique, we have grown 50 periods of {1.9 nm GaN with 3.1 nm AlN} SL on 600 nm AlN/c-sapphire with well doping levels of non-intentionally-doped ~10 16 , slightly-doped …”

Section: Effects Of Doping On Optical and Structural Qualitymentioning

confidence: 99%

Development of III-Nitride Based THz Inter-Subband Lasers

Razeghi¹

2009

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. III-Nitrides, due to their large conduction band offset and fast transition speeds, are promising constituents for intersubband (ISB) devices. In addition, III-Nitrides are characterized by a very large phonon energy (90 meV). This makes them ideally suited to the realization of near room temperature operating THz lasers. The objective of this program has been to demonstrate the potential for using III-Nitrides to realize a room temperature operating terahertz intersubband laser. In addition, III-Nitrides are characterized by a very large phonon energy (90 meV). This makes them ideally suited to the realization of near room temperature operating THz lasers. The objective of this program has been to demonstrate the potential for using III-Nitrides to realize a room temperature operating terahertz intersubband laser.As part of this contract, a comprehensive model of intersubband transitions was developed that takes into account the important effects of strain on bandstructure and piezo-as well as spontaneous-electric fields. Interband photoluminescence and intersubband absorption measurements were performed to help develop the modeling. We demonstrated the shortest MOCVD-grown III-Nitride intersubband absorption wavelength of 1.5 ?m as well as the longest intersubband wavelengths of 5.3 ?m, by any growth technique. In addition to investigating the optical properties we fabricated and tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III-Nitrides. Based on the refined III-Nitride intersubband models designs were also developed for room temperature terahertz emission via optical pumping. Electrical injection designs were also proposed for both polar and non-polar growth orientations. "Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications," SPIE

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Growth and optical properties of GaN/AlN quantum wells

Cited by 80 publications

References 24 publications

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

Strain accommodation and interfacial structure of AlN interlayers in GaN

Development of III-Nitride Based THz Inter-Subband Lasers

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