Growth and optical properties of CuGaTe2 thin films

Neumann, H.; Hörig, W.; Reccius, E.; Sobotta, H.; Schümann, B.; Kühn, G.

doi:10.1016/0040-6090(79)90494-2

Cited by 145 publications

(39 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…8 with increasing silica-phosphate glass density as that revealed in normal multi-component glasses [28,29]. The silicate network combination with phosphate as a dopant changes fundamentally the silicate glass properties, where the depolymerization of the phosphate cation occurs, thus diminishing the silicate glass network crosslinking to create a more open structure [29].…”

Section: Resultsmentioning

confidence: 91%

“…• C. The phosphate ions concentration increases the contribution in the silica-phosphate system depolymerization which enhances the increase in the concentration of bonding defects and NBOs in the silicate network [28][29][30]. The refractive indexes n values for SP2.5ErM are given at constant wavelength = 1400 nm was found to be equal to 1.6 and 1.74 at 500 and 900…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Battisha

Ayoub²,

Hashem

et al. 2017

Acta Phys. Pol. A

View full text Add to dashboard Cite

The phosphosilicate for planar waveguides fabrication by using sol-gel, and particularly erbium-doped waveguide amplifiers, is reviewed. In particular, efforts to use sol-gel to improve molecular homogeneity in Er-doped phosphosilicate-based monolith and thin films will be discussed. A variety of material studies was carried out to investigate and optimize the sample preparation condition for such application. These include X-ray diffraction, the Fourier transform infrared and optical transmittance, absorption and refractive index calculation. The erbium nitrate precursors use is shown to alter the Er 3+ ions doping in the prepared samples thermally treated in the final monolith glass form, in comparison to the use of thin film phosphosilicate sol-gel sample. Excess heat treatment is used to force prepared samples crystallization, moreover resulting photoluminescence analysis is used to detect the co-operative-up-conversion sample properties before and after heating.

show abstract

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 96%

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Battisha

Ayoub²,

Hashem

et al. 2017

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…The absorption coefficient,˛, of the In 2 O 3 films deposited on quartz substrates was calculated from the measured transmittance data alone by solving the relevant equations 29 using the Newton-Raphson method. Figure 4 the beginning of the Si substrate.…”

Section: Resultsmentioning

confidence: 99%

Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

Malar

Mohanty

Balamurugan

et al. 2005

Surface & Interface Analysis

View full text Add to dashboard Cite

Indium oxide thin films were grown onto Si and quartz substrates by d.c. reactive sputtering of elemental indium. X-ray diffraction and transmission electron microscopy studies confirmed the single-phase and polycrystalline nature of the films. Secondary ion mass spectrometry investigations of In 2 O 3 /Si structures showed the formation of an inhomogeneous interface region ∼20 nm thick between In 2 O 3 and Si. The overall feature of the interface remained the same under annealing in an oxygen atmosphere, but annealing in an argon atmosphere drastically altered the nature of the interface. The observations indicate that interface formation and stability depend critically on the availability of oxygen.

show abstract

“…3(a, b) show the oscillation patterns below photon energy~3.33 eV, which were basically thickness fringes owing to the transparent characteristic of films below their optical absorption edge. The thickness fringes depend on the absorption coefficient and thickness of SZO films [29]. No interference oscillation was observed for photon energy above photon energy~3.33 eV, due to the occurrence of light absorption resulting from the inter-band transition in SZO film.…”

Section: Electrical Propertiesmentioning

confidence: 98%

Spetroscopic ellipsometry study on electrical and elemental properties of Sb-doped ZnO thin films

Pandey

Awasthi

Verma

et al. 2015

Current Applied Physics

View full text Add to dashboard Cite

Growth and optical properties of CuGaTe2 thin films

Cited by 145 publications

References 21 publications

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

Spetroscopic ellipsometry study on electrical and elemental properties of Sb-doped ZnO thin films

Contact Info

Product

Resources

About

Growth and optical properties of CuGaTe2 thin films

Cited by 145 publications

References 21 publications

Thermal Effect of Er3+Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Thermal Effect of Er3+Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

Spetroscopic ellipsometry study on electrical and elemental properties of Sb-doped ZnO thin films

Contact Info

Product

Resources

About

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique

Thermal Effect of Er³⁺Ions Embedded in Smart Nano-Composite Oxide Material Prepared by Sol-Gel Technique