Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation by g-, b- radiations were investigated. At 60Со source gamma-quanta irradiation with a dose of Ф≥ 105 Gy, a slight decrease of samples’ structure and optical transmission, an increase of holes concentration p and a decrease of charge carrier mobility m in p-type crystals was observed. Within 30-40 days, the values of p and m were relaxed to an initial ones. Changes in structural perfection, optical transmission and electricalparameters of samples irradiated by electrons were more significant.