Growth and optical property characterization of textured barium titanate thin films for photonic applications

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

doi:10.1016/j.jcrysgro.2006.11.313

Cited by 17 publications

(12 citation statements)

References 12 publications

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“…One approach to resolve this challenge is to deposit a biaxially textured "seed" layer through ion beam assisted deposition (IBAD), which in turn enables relatively high-crystalline-quality epitaxial growth of the desired material. 1, [6][7][8][9][10][11][12][13][14] In IBAD growth, as MgO is deposited on the amorphous substrate, it is simultaneously etched by high energy (600-1000 eV) Ar þ ions at a 45 incident angle. After 2-10 nm IBAD MgO deposition, both out-of-plane (001) and in-plane texturing ((101) parallel to the 45 ion beam) form in the MgO layer, due to preferential removal of MgO of other orientations.…”

mentioning

confidence: 99%

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

Wang

Antonakos

Bordel

et al. 2016

Applied Physics Letters

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A fabrication process has been developed for high energy ion beam assisted deposition (IBAD) biaxial texturing of ultrathin (∼1 nm) MgO films, using a high ion-to-atom ratio and post-deposition annealing instead of a homoepitaxial MgO layer. These films serve as the seed layer for epitaxial growth of materials on amorphous substrates such as electron/X-ray transparent membranes or nanocalorimetry devices. Stress measurements and atomic force microscopy of the MgO films reveal decreased stress and surface roughness, while X-ray diffraction of epitaxial overlayers demonstrates the improved crystal quality of films grown epitaxially on IBAD MgO. The process simplifies the synthesis of IBAD MgO, fundamentally solves the “wrinkle” issue induced by the homoepitaxial layer on sub-50 nm membranes, and enables studies of epitaxial materials in electron/X-ray transmission and nanocalorimetry.

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mentioning

confidence: 99%

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

Wang

Antonakos

Bordel

et al. 2016

Applied Physics Letters

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“…Due to this low mismatch (<1%), the epitaxial growth of YSZ at the interface with sapphire should be driven by this orientation. Then, from the two in-plane orientations of (001) YSZ (orientations type_a and type_b), the lowest mismatch is 1.6% along [1][2][3][4][5][6][7][8][9][10] reveal the location of YSZ grains (bright color) corresponding to the different electron-diffraction patterns of Fig. 4(a).…”

Section: In-plane Orientation Of Ysz On Sapphirementioning

confidence: 99%

“…In this context, functional oxides have emerged as a promising material family to expand the functionalities of current photonic circuits thanks to their wide range of properties as multiferroicity, piezoelectricity, and optical nonlinearities [4][5][6][7][8]. Usually, the epitaxial growth of highcrystalline quality functional oxides requires a buffer layer for a better lattice adaptation and to avoid interdiffusion between substrate and oxide materials.…”

Section: Introductionmentioning

confidence: 99%

High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications

Marcaud

Matzen

Alonso‐Ramos

et al. 2018

Phys. Rev. Materials

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Functional oxides are considered as promising materials for photonic applications due to their extraordinary and various optical properties. Especially, yttria-stabilized zirconia (YSZ) has a high refractive index (∼2.15), leading to a good confinement of the optical mode in waveguides. Furthermore, YSZ can also be used as a buffer layer to expand toward a large family of oxides-based thin-films heterostructures. In this paper, we report a complete study of the structural properties of YSZ for the development of integrated optical devices on sapphire in telecom wavelength range. The substrate preparation and the epitaxial growth using pulsed-laser deposition technique have been studied and optimized. High-quality YSZ thin films with remarkably sharp x-ray diffraction rocking curve peaks in 10 −3 • range have then been grown on sapphire (0001). It was demonstrated that a thermal annealing of sapphire substrate before the YSZ growth allowed controlling the out-of-plane orientation of the YSZ thin film. Single-mode waveguides were finally designed, fabricated, and characterized for two different main orientations of high-quality YSZ (001) and (111). Propagation loss as low as 2 dB/cm at a wavelength of 1380 nm has been demonstrated for both orientations. These results pave the way for the development of a functional oxides-based photonics platform for numerous applications including on-chip optical communications and sensing.

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“…Ferroelectric thin films have been extensively studied in the last years due to their importance in application of microelectronic and opto-electronic devices [1][2][3][4][5][6]. Bismuth layered perovskite ferroelectric thin films such as SrBi 2 Nb 2 O 9 (SBN) and SrBi 2 Ta 2 O 9 (SBT) have attracted a lot of interest as the alternative materials to Pb(Ti, Zr)O 3 (PZT) films due to their high dielectric constant, low leakage current, absence of fatigue and lead-free composition [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

Chen

2008

Applied Surface Science

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Growth and optical property characterization of textured barium titanate thin films for photonic applications

Cited by 17 publications

References 12 publications

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

High-quality crystalline yttria-stabilized-zirconia thin layer for photonic applications

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

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