Growth and phase transformations of Ir on Ge(111)

Mullet, Cory; Stenger, Bret; Durand, Alexandra; Morad, J. A.; Sato, Yu; Poppenheimer, E.C.; Chiang, S.

doi:10.1016/j.susc.2017.08.021

Cited by 4 publications

(2 citation statements)

References 22 publications

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“…The Ge 3d peak is around 29.1 eV, indicating that the interfacial germanium is in elemental state rather than Ir germanide. [27] XPS spectra of C 1s centered around 284.1 eV (Fig. 3(b)) for graphene before and after the formation of graphene/germanium heterostructure show characteristic features of sp 2 -hybridized carbon.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation*

Guo¹,

Wang²,

Bao³

et al. 2019

Chinese Phys. B

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We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional (2D) germanium. The heterostructure is constructed by the intercalation-assisted technique. We first synthesize large-scale, single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111). The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111). Theoretical calculations demonstrate that the 2D germanium has a double-layer structure. Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one. Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy (XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure. The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.

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Section: Resultsmentioning

confidence: 99%

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation*

Guo¹,

Wang²,

Bao³

et al. 2019

Chinese Phys. B

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show abstract

“…S1 in supplementary material (SM)), indicating that the interfacial germanium is in elemental state rather than Ir germanide. [34] After oxidation, the Ge 3d peak evolves into a broad peak centered at 31.82 eV corresponding to Ge 3+ , indicating the formation of germanium suboxides. [35][36][37] Detailed oxidation process is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Intercalation of germanium oxide beneath large-area and high-quality epitaxial graphene on Ir(111) substrate*

Wang

Guo

et al. 2021

Chinese Phys. B

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Epitaxial growth on transition metal surfaces is an effective way to prepare large-area and high-quality graphene. However, the strong interaction between graphene and metal substrates suppresses the intrinsic excellent properties of graphene and the conductive metal substrates also hinder its applications in electronics. Here we demonstrate the decoupling of graphene from metal substrates by germanium oxide intercalation. Germanium is firstly intercalated into the interface between graphene and Ir(111) substrate. Then oxygen is subsequently intercalated, leading to the formation of a GeO x layer, which is confirmed by x-ray photoelectron spectroscopy. Low-energy electron diffraction and scanning tunneling microscopy studies show intact carbon lattice of graphene after the GeO x intercalation. Raman characterizations reveal that the intercalated layer effectively decouples graphene from the Ir substrate. The transport measurements demonstrate that the GeO x layer can act as a tunneling barrier in the fabricated large-area high-quality vertical graphene/GeO x /Ir heterostructure.

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Electrical Properties of Metals in Si and Ge

Claeys

Simoen²

2018

Metal Impurities in Silicon- And Germanium-Based Technologies

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Growth and phase transformations of Ir on Ge(111)

Cited by 4 publications

References 22 publications

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation*

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation*

Intercalation of germanium oxide beneath large-area and high-quality epitaxial graphene on Ir(111) substrate*

Electrical Properties of Metals in Si and Ge

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