Growth and Properties of Core‐Shelled SiC–SiO₂ Nanowires Using Chemical Vapor Deposition

Abstract

Core-shelled SiC-SiO 2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 11001C. The average diameter and length are 30 nm and in the order of 10 1 mm, respectively. Ceramic Product Development and CommercializationThe SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 711 to the nanowires axis. The existence of the SiO 2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested.